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Contents

README

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BC816-25WX

Nexperia · Bipolar (BJT) · SOT-323-3

BC816-25WX from Nexperia, in a SOT-323-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base terminal; the datasheet limits peak base current to IBM 200 mA (single pulse, tp ≤ 1 ms) and emitter-base voltage to VEBO 7 V.
2 E passive Emitter terminal; the emitter-base breakdown voltage V(BR)EBO is 7 V minimum at IE = 100 µA with IC = 0 A.
3 C passive Collector terminal; the datasheet limits collector current to IC 500 mA (peak ICM 1 A, single pulse, tp ≤ 1 ms) with VCBO and VCEO of 80 V.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-323-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
collector-base breakdown voltage V(BR)CBO 80 V IC = 100 µA; IE = 0 A 5
collector-emitter breakdown voltage V(BR)CEO 80 V IC = 2 mA; IE = 0 A 5
emitter-base breakdown voltage V(BR)EBO 7 V IE = 100 µA; IC = 0 A 5
collector-base cut-off current ICBO 100 nA VCB = 64 V; IE = 0 A 5
collector-base cut-off current at Tj = 150 °C ICBO 5 μA VCB = 64 V; IE = 0 A; Tj = 150 °C 5
emitter-base cut-off current IEBO 100 nA VEB = 5.6 V; IC = 0 A 5
DC current gain (BC816-25W) hFE 160 400 VCE = 1 V; IC = 100 mA; pulsed; tp ≤ 300 μs; δ ≤ 0.02 5
DC current gain hFE 30 VCE = 2 V; IC = 500 mA; pulsed; tp ≤ 300 μs; δ ≤ 0.02 5
collector-emitter saturation voltage VCEsat 150 mV IC = 100 mA; IB = 10 mA; pulsed; tp ≤ 300 μs; δ ≤ 0.02 5
collector-emitter saturation voltage VCEsat 400 mV IC = 500 mA; IB = 50 mA; pulsed; tp ≤ 300 μs; δ ≤ 0.02 5
base-emitter voltage VBE 1.2 V VCE = 1 V; IC = 500 mA; pulsed; tp ≤ 300 μs; δ ≤ 0.02 5
transition frequency fT 100 MHz VCE = 5 V; IC = 50 mA; f = 100 MHz 5
collector-base voltage VCBO 80 V open emitter 3
collector-emitter voltage VCEO 80 V open base 3
emitter-base voltage VEBO 7 V open collector 3
collector current IC 500 mA 3
peak collector current ICM 1 A single pulse; tp ≤ 1 ms 3
peak base current IBM 200 mA single pulse; tp ≤ 1 ms 3
total power dissipation Ptot 200 mW Tamb ≤ 25 °C; FR4 PCB; single-sided copper; tin-plated; standard footprint [1] 3
total power dissipation Ptot 290 mW FR4 PCB; single-sided copper; tin-plated; mounting pad for collector 1 cm2 [2] 3
junction temperature Tj 150 °C 3
ambient temperature Tamb -55 150 °C 3
storage temperature Tstg -65 150 °C 3
thermal resistance from junction to ambient Rth(j-a) 625 K/W in free air; FR4 PCB; single-sided copper; tin-plated; standard footprint [1] 4
thermal resistance from junction to ambient Rth(j-a) 431 K/W in free air; FR4 PCB; single-sided copper; tin-plated; mounting pad for collector 1 cm2 [2] 4

CAD (KiCad official)

  • Symbol: BC816-25WX
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323-3 (KiCad packages3D, STEP)
  • 3D model files: bc816-25wx-etched.step / bc816-25wx-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc816-25wx.step / bc816-25wx.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (12 pp, sha256 7db436ca0eaf79fd, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF