component
BC816-25HR
Public Made by Adomby adom
Nexperia Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BC816-25HR
Nexperia · Bipolar (BJT) · SOT-23
BC816-25HR from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; peak base current is limited to 200 mA (single pulse, tp ≤ 1 ms, Tamb = 25 °C). |
| 2 | E | passive | Emitter of the NPN transistor; emitter-base voltage is limited to 7 V (open collector, Tamb = 25 °C). |
| 3 | C | passive | Collector of the NPN transistor; collector-emitter voltage is limited to 80 V (open base) and collector current to 500 mA at Tamb = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO | 80 | V | open emitter; Tamb = 25 °C | 3 | ||
| Collector-emitter voltage | VCEO | 80 | V | open base; Tamb = 25 °C | 3 | ||
| Emitter-base voltage | VEBO | 7 | V | open collector; Tamb = 25 °C | 3 | ||
| Collector current | IC | 500 | mA | Tamb = 25 °C | 3 | ||
| Peak collector current | ICM | 1 | A | single pulse; tp ≤ 1 ms; Tamb = 25 °C | 3 | ||
| Peak base current | IBM | 200 | mA | single pulse; tp ≤ 1 ms; Tamb = 25 °C | 3 | ||
| Total power dissipation | Ptot | 300 | mW | Tamb ≤ 25 °C; FR4 PCB, single-sided copper, tin-plated, standard footprint [1] | 3 | ||
| Total power dissipation | Ptot | 415 | mW | FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2 [2] | 3 | ||
| Junction temperature | Tj | 175 | °C | 3 | |||
| Ambient temperature | Tamb | -55 | 175 | °C | 3 | ||
| Storage temperature | Tstg | -65 | 175 | °C | 3 | ||
| Thermal resistance junction to ambient | Rth(j-a) | 500 | K/W | in free air; Tamb = 25 °C; FR4 PCB, single-sided copper, tin-plated, standard footprint [1] | 4 | ||
| Thermal resistance junction to ambient | Rth(j-a) | 363 | K/W | in free air; Tamb = 25 °C; FR4 PCB, mounting pad for collector 1 cm2 [2] | 4 | ||
| Collector-base breakdown voltage | V(BR)CBO | 80 | V | IC = 100 µA; IE = 0 A; Tamb = 25 °C | 5 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 80 | V | IC = 2 mA; IE = 0 A; Tamb = 25 °C | 5 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 7 | V | IE = 100 µA; IC = 0 A; Tamb = 25 °C | 5 | ||
| Collector-base cut-off current | ICBO | 100 | nA | VCB = 64 V; IE = 0 A; Tamb = 25 °C | 5 | ||
| Collector-base cut-off current | ICBO | 5 | μA | VCB = 64 V; IE = 0 A; Tj = 150 °C | 5 | ||
| Emitter-base cut-off current | IEBO | 100 | nA | VEB = 5.6 V; IC = 0 A; Tamb = 25 °C | 5 | ||
| DC current gain (BC816-25H) | hFE | 160 | 400 | VCE = 1 V; IC = 100 mA; Tamb = 25 °C; pulsed tp ≤ 300 µs; δ ≤ 0.02 | 5 | ||
| DC current gain | hFE | 30 | VCE = 2 V; IC = 500 mA; Tamb = 25 °C; pulsed tp ≤ 300 µs; δ ≤ 0.02 | 5 | |||
| Collector-emitter saturation voltage | VCEsat | 150 | mV | IC = 100 mA; IB = 10 mA; Tamb = 25 °C; pulsed tp ≤ 300 µs; δ ≤ 0.02 | 5 | ||
| Collector-emitter saturation voltage | VCEsat | 400 | mV | IC = 500 mA; IB = 50 mA; Tamb = 25 °C; pulsed tp ≤ 300 µs; δ ≤ 0.02 | 5 | ||
| Base-emitter voltage | VBE | 1.2 | V | VCE = 1 V; IC = 500 mA; Tamb = 25 °C; pulsed tp ≤ 300 µs; δ ≤ 0.02 | 5 | ||
| Transition frequency | fT | 100 | MHz | VCE = 5 V; IC = 50 mA; f = 100 MHz; Tamb = 25 °C | 5 |
CAD (KiCad official)
- Symbol:
BC816-25HR - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
bc816-25hr-etched.step/bc816-25hr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bc816-25hr.step/bc816-25hr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (16 pp, sha256
d1bbd56c2713eb10, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BC816-25HR
**Nexperia** · Bipolar (BJT) · SOT-23
BC816-25HR from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; peak base current is limited to 200 mA (single pulse, tp ≤ 1 ms, Tamb = 25 °C). |
| 2 | E | passive | Emitter of the NPN transistor; emitter-base voltage is limited to 7 V (open collector, Tamb = 25 °C). |
| 3 | C | passive | Collector of the NPN transistor; collector-emitter voltage is limited to 80 V (open base) and collector current to 500 mA at Tamb = 25 °C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO | | | 80 | V | open emitter; Tamb = 25 °C | 3 |
| Collector-emitter voltage | VCEO | | | 80 | V | open base; Tamb = 25 °C | 3 |
| Emitter-base voltage | VEBO | | | 7 | V | open collector; Tamb = 25 °C | 3 |
| Collector current | IC | | | 500 | mA | Tamb = 25 °C | 3 |
| Peak collector current | ICM | | | 1 | A | single pulse; tp ≤ 1 ms; Tamb = 25 °C | 3 |
| Peak base current | IBM | | | 200 | mA | single pulse; tp ≤ 1 ms; Tamb = 25 °C | 3 |
| Total power dissipation | Ptot | | | 300 | mW | Tamb ≤ 25 °C; FR4 PCB, single-sided copper, tin-plated, standard footprint [1] | 3 |
| Total power dissipation | Ptot | | | 415 | mW | FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2 [2] | 3 |
| Junction temperature | Tj | | | 175 | °C | | 3 |
| Ambient temperature | Tamb | -55 | | 175 | °C | | 3 |
| Storage temperature | Tstg | -65 | | 175 | °C | | 3 |
| Thermal resistance junction to ambient | Rth(j-a) | | | 500 | K/W | in free air; Tamb = 25 °C; FR4 PCB, single-sided copper, tin-plated, standard footprint [1] | 4 |
| Thermal resistance junction to ambient | Rth(j-a) | | | 363 | K/W | in free air; Tamb = 25 °C; FR4 PCB, mounting pad for collector 1 cm2 [2] | 4 |
| Collector-base breakdown voltage | V(BR)CBO | 80 | | | V | IC = 100 µA; IE = 0 A; Tamb = 25 °C | 5 |
| Collector-emitter breakdown voltage | V(BR)CEO | 80 | | | V | IC = 2 mA; IE = 0 A; Tamb = 25 °C | 5 |
| Emitter-base breakdown voltage | V(BR)EBO | 7 | | | V | IE = 100 µA; IC = 0 A; Tamb = 25 °C | 5 |
| Collector-base cut-off current | ICBO | | | 100 | nA | VCB = 64 V; IE = 0 A; Tamb = 25 °C | 5 |
| Collector-base cut-off current | ICBO | | | 5 | μA | VCB = 64 V; IE = 0 A; Tj = 150 °C | 5 |
| Emitter-base cut-off current | IEBO | | | 100 | nA | VEB = 5.6 V; IC = 0 A; Tamb = 25 °C | 5 |
| DC current gain (BC816-25H) | hFE | 160 | | 400 | | VCE = 1 V; IC = 100 mA; Tamb = 25 °C; pulsed tp ≤ 300 µs; δ ≤ 0.02 | 5 |
| DC current gain | hFE | 30 | | | | VCE = 2 V; IC = 500 mA; Tamb = 25 °C; pulsed tp ≤ 300 µs; δ ≤ 0.02 | 5 |
| Collector-emitter saturation voltage | VCEsat | | | 150 | mV | IC = 100 mA; IB = 10 mA; Tamb = 25 °C; pulsed tp ≤ 300 µs; δ ≤ 0.02 | 5 |
| Collector-emitter saturation voltage | VCEsat | | | 400 | mV | IC = 500 mA; IB = 50 mA; Tamb = 25 °C; pulsed tp ≤ 300 µs; δ ≤ 0.02 | 5 |
| Base-emitter voltage | VBE | | | 1.2 | V | VCE = 1 V; IC = 500 mA; Tamb = 25 °C; pulsed tp ≤ 300 µs; δ ≤ 0.02 | 5 |
| Transition frequency | fT | 100 | | | MHz | VCE = 5 V; IC = 50 mA; f = 100 MHz; Tamb = 25 °C | 5 |
## CAD (KiCad official)
- Symbol: `BC816-25HR`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `bc816-25hr-etched.step` / `bc816-25hr-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bc816-25hr.step` / `bc816-25hr.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Nexperia datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8602970848861446144) (16 pp, sha256 `d1bbd56c2713eb10`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bc816-25hr-datasheet.pdf)