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BC807-40LT3G

Public Made by Adom

by adom

onsemi Bipolar Transistors - BJT, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BC807-40LT3G

onsemi · Bipolar Transistors - BJT · SOT-23

BC807-40LT3G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the PNP transistor; base-emitter on voltage VBE(on) is at most -1.2 V at IC = -500 mA and VCE = -1.0 V.
2 EMITTER passive Emitter terminal of the PNP transistor; emitter-base breakdown voltage V(BR)EBO is at least -5.0 V at the specified test current.
3 COLLECTOR passive Collector terminal of the PNP transistor; collector-emitter voltage VCEO is -45 V and continuous collector current IC is -500 mA.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage VCEO -45 V 1
Collector-Base Voltage VCBO -50 V 1
Emitter-Base Voltage VEBO -5 V 1
Collector Current - Continuous IC -500 mAdc 1
Junction and Storage Temperature TJ, Tstg -55 150 °C 1
Total Device Dissipation FR-5 Board PD 225 mW FR-5 Board (Note 1), TA = 25°C 1
Total Device Dissipation Alumina Substrate PD 300 mW Alumina Substrate (Note 2), TA = 25°C 1
Thermal Resistance Junction-to-Ambient FR-5 Board RJA 556 °C/W FR-5 Board (Note 1) 1
Thermal Resistance Junction-to-Ambient Alumina Substrate RJA 417 °C/W Alumina Substrate (Note 2) 1
Collector-Emitter Breakdown Voltage V(BR)CEO -45 V IC = -10 mA 2
Collector-Emitter Breakdown Voltage V(BR)CES -50 V VEB = 0, IC = -10 A 2
Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE = -1.0 A 2
Collector Cutoff Current ICBO -100 nA VCB = -20 V 2
Collector Cutoff Current ICBO -5 A VCB = -20 V, TJ = 150°C 2
DC Current Gain (BC807-40) hFE 250 600 IC = -100 mA, VCE = -1.0 V 2
DC Current Gain (BC807-40) hFE 40 IC = -500 mA, VCE = -1.0 V 2
Collector-Emitter Saturation Voltage VCE(sat) -0.7 V IC = -500 mA, IB = -50 mA 2
Base-Emitter On Voltage VBE(on) -1.2 V IC = -500 mA, VCE = -1.0 V 2
Current-Gain - Bandwidth Product fT 100 MHz IC = -10 mA, VCE = -5.0 Vdc, f = 100 MHz 2

CAD (KiCad official)

  • Symbol: BC807-40LT3G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bc807-40lt3g-etched.step / bc807-40lt3g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc807-40lt3g.step / bc807-40lt3g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (10 pp, sha256 8095a17325cb175d, retrieved 2026-10-26, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed (audit)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF