# BC807-40HR

**Nexperia** · Bipolar Transistors - BJT · SOT-23

BC807-40HR from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base terminal for controlling transistor conduction with peak base current maximum of 200 mA. |
| 2 | E | passive | Emitter terminal providing the return current path in PNP transistor operation. |
| 3 | C | passive | Collector terminal conducting up to 500 mA continuously with maximum collector-emitter voltage of 45 V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| collector-base voltage | VCBO |  |  | -50 | V | open emitter | 3 |
| collector-emitter voltage | VCEO |  |  | -45 | V | open base | 3 |
| emitter-base voltage | VEBO |  |  | -7 | V | open collector | 3 |
| collector current | IC |  |  | -500 | mA |  | 3 |
| peak collector current | ICM |  |  | -1 | A | single pulse; tp ≤ 1 ms | 3 |
| peak base current | IBM |  |  | -200 | mA | single pulse; tp ≤ 1 ms | 3 |
| total power dissipation | Ptot |  |  | 320 | mW | Tamb ≤ 25 °C; FR4 PCB, single-sided copper, tin-plated, standard footprint [1] | 3 |
| total power dissipation | Ptot |  |  | 440 | mW | Tamb ≤ 25 °C; FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2 [2] | 3 |
| total power dissipation | Ptot |  |  | 460 | mW | Tamb ≤ 25 °C; FR4 PCB, 4-layer copper, tin-plated, standard footprint [3] | 3 |
| total power dissipation | Ptot |  |  | 540 | mW | Tamb ≤ 25 °C; FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm2 [4] | 3 |
| junction temperature | Tj |  |  | 175 | °C |  | 3 |
| ambient temperature | Tamb | -55 |  | 175 | °C |  | 3 |
| storage temperature | Tstg | -65 |  | 175 | °C |  | 3 |
| thermal resistance from junction to ambient | Rth(j-a) |  |  | 470 | K/W | FR4 PCB, single-sided copper, tin-plated, standard footprint [1] | 5 |
| thermal resistance from junction to ambient | Rth(j-a) |  |  | 340 | K/W | FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2 [2] | 5 |
| thermal resistance from junction to ambient | Rth(j-a) |  |  | 325 | K/W | FR4 PCB, 4-layer copper, tin-plated, standard footprint [3] | 5 |
| thermal resistance from junction to ambient | Rth(j-a) |  |  | 280 | K/W | FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm2 [4] | 5 |
| thermal resistance from junction to solder point | R(j-sp) |  |  | 110 | K/W | in free air | 5 |
| collector-base breakdown voltage | V(BR)CBO | -50 |  |  | V | IC = -100 µA; IE = 0 A | 7 |
| collector-emitter breakdown voltage | V(BR)CEO | -45 |  |  | V | IC = -10 mA; IB = 0 A | 7 |
| emitter-base breakdown voltage | V(BR)EBO | -7 |  |  | V | IE = -100 µA; IC = 0 A | 7 |
| collector-base cut-off current | ICBO |  |  | -100 | nA | VCB = -25 V; IE = 0 A | 7 |
| collector-base cut-off current | ICBO |  |  | -5 | μA | VCB = -25 V; IE = 0 A; Tj = 150 °C | 7 |
| emitter-base cut-off current | IEBO |  |  | -100 | nA | VEB = -5 V; IC = 0 A | 7 |
| DC current gain (BC807-40H) | hFE | 250 |  | 600 |  | VCE = -1 V; IC = -100 mA; [1] pulsed; tp ≤ 300 μs; δ ≤ 0.02 | 7 |
| DC current gain | hFE | 40 |  |  |  | VCE = -1 V; IC = -500 mA; [1] pulsed; tp ≤ 300 μs; δ ≤ 0.02 | 7 |
| collector-emitter saturation voltage | VCEsat |  |  | -700 | mV | IC = -500 mA; IB = -50 mA; [1] pulsed; tp ≤ 300 μs; δ ≤ 0.02 | 7 |
| base-emitter saturation voltage | VBEsat |  |  | -1.2 | V | IC = -500 mA; IB = -50 mA; [1] pulsed; tp ≤ 300 μs; δ ≤ 0.02 | 7 |
| base-emitter voltage | VBE |  |  | -1.2 | V | VCE = -1 V; IC = -500 mA; [1] pulsed; tp ≤ 300 μs; δ ≤ 0.02 | 7 |
| transition frequency | fT | 80 |  |  | MHz | VCE = -5 V; IC = -10 mA; f = 100 MHz | 7 |
| emitter capacitance (BC807-40H) | Ce |  |  | 37 | pF | VEB = -0.5 V; IC = ic = 0 A; f = 1 MHz | 7 |

## CAD (KiCad official)

- Symbol: `BC807-40HR`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `bc807-40hr-etched.step` / `bc807-40hr-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bc807-40hr.step` / `bc807-40hr.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Nexperia datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588913394104094720) (21 pp, sha256 `7c99b4c96bd6b743`, retrieved 2026-09-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.2`, primary `claude-haiku-4-5-20251001` (text), consensus `claude-sonnet-4-6` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/bc807-40hr-datasheet.pdf)