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BC807-25WT1G

Public Made by Adom

by adom

onsemi Bipolar (BJT), SOT-323(SC-70). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BC807-25WT1G

onsemi · Bipolar (BJT) · SOT-323(SC-70)

BC807-25WT1G from onsemi, in a SOT-323(SC-70). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the PNP transistor in the Style 3 SC-70 (SOT-323) package; the datasheet gives no pin-specific voltage or current limits for this pin.
2 EMITTER passive Emitter terminal of the PNP transistor in the Style 3 SC-70 (SOT-323) package; the datasheet gives no pin-specific voltage or current limits for this pin.
3 COLLECTOR passive Collector terminal of the PNP transistor in the Style 3 SC-70 (SOT-323) package; the datasheet gives no pin-specific voltage or current limits for this pin, and the device-level limit is VCEO −45 V with continuous IC −500 mA.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-323(SC-70)
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage V(BR)CEO -45 V IC = −10 mA 2
Collector-Emitter Breakdown Voltage V(BR)CES -50 V VEB = 0, IC = −10 A 2
Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE = −1.0 A 2
Collector Cutoff Current ICBO -100 nA VCB = −20 V 2
Collector Cutoff Current ICBO -5 A VCB = −20 V, TJ = 150°C 2
DC Current Gain (BC807-25) hFE 160 400 IC = −100 mA, VCE = −1.0 V 2
DC Current Gain hFE 40 IC = −500 mA, VCE = −1.0 V 2
Collector-Emitter Saturation Voltage VCE(sat) -0.7 V IC = −500 mA, IB = −50 mA 2
Base-Emitter On Voltage VBE(on) -1.2 V IC = −500 mA, VCE = −1.0 V 2
Current-Gain-Bandwidth Product fT 100 MHz IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz 2
Collector-Emitter Voltage VCEO -45 V 1
Collector-Base Voltage VCBO -50 V 1
Emitter-Base Voltage VEBO -5 V 1
Collector Current - Continuous IC -500 mAdc 1
Total Device Dissipation PD 460 mW FR-5 Board (Note 1), TA = 25°C 1
Thermal Resistance, Junction-to-Ambient RJA 272 °C/W 1
Junction and Storage Temperature TJ, Tstg -55 150 °C 1

CAD (KiCad official)

  • Symbol: BC807-25WT1G
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323(SC-70) (KiCad packages3D, STEP)
  • 3D model files: bc807-25wt1g-etched.step / bc807-25wt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc807-25wt1g.step / bc807-25wt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (9 pp, sha256 c44d90024cea86b1, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF