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BC807-25_R1_00001

PANJIT International · Bipolar (BJT) · SOT-23

BC807-25_R1_00001 from PANJIT International, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the PNP transistor, shown on the bottom-left lead in the Fig.35 symbol; the datasheet gives VEBO of -5 V and an emitter-base breakdown of -5.0 V minimum.
2 E passive Emitter of the PNP transistor, shown on the bottom-right lead in the Fig.35 symbol; the datasheet gives VEBO of -5 V.
3 C passive Collector of the PNP transistor, shown on the single top lead in the Fig.35 symbol; the datasheet gives VCEO of -45 V, VCBO of -50 V, continuous IC of -500 mA and peak ICM of -1000 mA.

Key specifications

Parameter Value
Manufacturer PANJIT International
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage VCEO -45 V 1
Collector-Base Voltage VCBO -50 V 1
Emitter-Base Voltage VEBO -5 V 1
Collector Current - Continuous IC -500 mA 1
Peak Collector Current ICM -1000 mA 1
Total Power Dissipation (Note 1) PTOT 330 mW Note 1: transistor mounted on FR-5 board, minimum pad mounting conditions 1
Junction and Storage Temperature Range TJ , TSTG -55 150 oC 1
Thermal Resistance Junction to Ambient (Note 1) RθJA 375 oC/W Note 1: transistor mounted on FR-5 board, minimum pad mounting conditions 1
Thermal Resistance Junction to Lead RθJL 220 oC/W 1
Collector-Emitter Breakdown Voltage V(BR)CEO -45 V IC=-10mA, IB=0 2
Collector-Base Breakdown Voltage V(BR)CBO -50 V VEB=0V, IC=-10μA 2
Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-1μA, Ic=0 2
Emitter-Base Cutoff Current IEBO -100 nA VEB=-5V 2
Collector-Base Cutoff Current ICBO -100 nA VCB=-20V, IE=0, TJ=25oC 2
Collector-Base Cutoff Current ICBO -5 μA VCB=-20V, IE=0, TJ=150oC 2
DC Current Gain (BC807-25) hFE 160 400 Ic=-100mA, VCE=-1V 2
Collector-Emitter Saturation Voltage VCE(SAT) -0.7 V Ic=-500mA, IB=-50mA 2
Base-Emitter Voltage VBE(ON) -1.2 V Ic=-500mA, VCE=-1.0V 2
Current Gain-Bandwidth Product fT 100 MHz Ic=-10mA, VCE=-5V, f=100MHz 2

CAD (KiCad official)

  • Symbol: BC807-25_R1_00001
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bc807-25-r1-00001-etched.step / bc807-25-r1-00001-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc807-25-r1-00001.step / bc807-25-r1-00001.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: PANJIT International datasheet (5 pp, sha256 b3eb84cb0e1ee5f0, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF