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BC807-16W

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Nexperia Bipolar (BJT), SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BC807-16W

Nexperia · Bipolar (BJT) · SOT-323

BC807-16W from Nexperia, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B passive Base terminal of the PNP transistor; the datasheet limits peak base current IBM to -200 mA (single pulse, tp ≤ 1 ms, Tamb = 25 °C).
2 E passive Emitter terminal of the PNP transistor; the emitter-base breakdown voltage V(BR)EBO is -5 V minimum at IE = -100 µA.
3 C passive Collector terminal of the PNP transistor; the datasheet limits collector current IC to -500 mA and gives VCEO = -45 V and VCBO = -50 V.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-323
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO -50 V IC = -100 µA; IE = 0 A; Tamb = 25 °C 5
Collector-emitter breakdown voltage V(BR)CEO -45 V IC = -10 mA; IE = 0 A; Tamb = 25 °C 5
Emitter-base breakdown voltage V(BR)EBO -5 V IE = -100 µA; IC = 0 A; Tamb = 25 °C 5
Collector-base cut-off current ICBO -100 nA VCB = -20 V; IE = 0 A; Tamb = 25 °C 5
Collector-base cut-off current ICBO -5 μA VCB = -20 V; IE = 0 A; Tj = 150 °C 5
Emitter-base cut-off current IEBO -100 nA VEB = -5 V; IC = 0 A; Tamb = 25 °C 5
DC current gain (BC807-16W) hFE 100 250 VCE = -1 V; IC = -100 mA; Tamb = 25 °C; pulsed; tp ≤ 300 μs; δ ≤ 0.02 5
DC current gain hFE 40 VCE = -1 V; IC = -500 mA; Tamb = 25 °C; pulsed; tp ≤ 300 μs; δ ≤ 0.02 5
Collector-emitter saturation voltage VCEsat -700 mV IC = -500 mA; IB = -50 mA; Tamb = 25 °C; pulsed; tp ≤ 300 μs; δ ≤ 0.02 5
Base-emitter voltage VBE -1.2 V VCE = -1 V; IC = -500 mA; Tamb = 25 °C; pulsed; tp ≤ 300 μs; δ ≤ 0.02 5
Transition frequency fT 80 MHz VCE = -5 V; IC = -10 mA; f = 100 MHz; Tamb = 25 °C 5
Collector-base voltage VCBO -50 V open emitter; Tamb = 25 °C 3
Collector-emitter voltage VCEO -45 V open base; Tamb = 25 °C 3
Emitter-base voltage VEBO -5 V open collector; Tamb = 25 °C 3
Collector current IC -500 mA Tamb = 25 °C 3
Peak collector current ICM -1 A single pulse; tp ≤ 1 ms; Tamb = 25 °C 3
Peak base current IBM -200 mA single pulse; tp ≤ 1 ms; Tamb = 25 °C 3
Total power dissipation Ptot 200 mW Tamb ≤ 25 °C 3
Total power dissipation (mounting pad for collector 1 cm²) Ptot 290 mW 3
Junction temperature Tj 150 °C 3
Ambient temperature Tamb -65 150 °C 3
Storage temperature Tstg -65 150 °C 3
Thermal resistance from junction to ambient Rth(j-a) 625 K/W in free air; FR4 PCB, single-sided copper, tin-plated, standard footprint 4
Thermal resistance from junction to ambient Rth(j-a) 431 K/W in free air; FR4 PCB, single-sided copper, tin-plated; mounting pad for collector 1 cm² 4

CAD (KiCad official)

  • Symbol: BC807-16W
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: bc807-16w-etched.step / bc807-16w-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc807-16w.step / bc807-16w.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (13 pp, sha256 ca28e5536df5e856, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF