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BC807-16LWX

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Nexperia Bipolar Transistors - BJT, SOT-323-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BC807-16LWX

Nexperia · Bipolar Transistors - BJT · SOT-323-3

BC807-16LWX from Nexperia, in a SOT-323-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the PNP transistor; the datasheet gives VEBO of -7 V max and peak base current IBM of -200 mA (single pulse, tp ≤ 1 ms).
2 E passive Emitter of the PNP transistor; the datasheet gives VEBO of -7 V max (emitter-base, open collector).
3 C passive Collector of the PNP transistor; the datasheet gives VCEO of -45 V, VCBO of -50 V and IC of -500 mA max (ICM -1 A peak).

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-323-3
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
DC current gain (BC807-16LW) hFE 100 250 VCE = -1 V; IC = -100 mA; pulsed tp ≤ 300 μs; δ ≤ 0.02 4
DC current gain hFE 40 VCE = -1 V; IC = -500 mA; pulsed tp ≤ 300 μs; δ ≤ 0.02 4
Collector-base breakdown voltage V(BR)CBO -50 V IC = -100 µA; IE = 0 A 4
Collector-emitter breakdown voltage V(BR)CEO -45 V IC = -10 mA; IB = 0 A 4
Emitter-base breakdown voltage V(BR)EBO -7 V IE = -100 µA; IC = 0 A 4
Collector-base cut-off current ICBO -100 nA VCB = -40 V; IE = 0 A 4
Collector-base cut-off current ICBO -5 μA VCB = -40 V; IE = 0 A; Tj = 150 °C 4
Emitter-base cut-off current IEBO -100 nA VEB = -5 V; IC = 0 A 4
Collector-emitter saturation voltage VCEsat -700 mV IC = -500 mA; IB = -50 mA 4
Base-emitter voltage VBE -1.2 V VCE = -1 V; IC = -500 mA 4
Transition frequency fT 80 MHz VCE = -5 V; IC = -10 mA; f = 100 MHz 5
Collector capacitance Cc 5.5 pF VCB = -10 V; IE = ie = 0 A; f = 1 MHz 5
Collector-base voltage VCBO -50 V open emitter 3
Collector-emitter voltage VCEO -45 V open base 3
Emitter-base voltage VEBO -7 V open collector 3
Collector current IC -500 mA 3
Peak collector current ICM -1 A single pulse; tp ≤ 1 ms 3
Peak base current IBM -200 mA single pulse; tp ≤ 1 ms 3
Total power dissipation BC807LW (SOT323) Ptot 200 mW Tamb ≤ 25 °C 3
Junction temperature Tj 150 °C 4
Ambient temperature Tamb -55 150 °C 4
Storage temperature Tstg -65 150 °C 4
Thermal resistance junction to ambient SOT323 Rth(j-a) 625 K/W in free air 4

CAD (KiCad official)

  • Symbol: BC807-16LWX
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323-3 (KiCad packages3D, STEP)
  • 3D model files: bc807-16lwx-etched.step / bc807-16lwx-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc807-16lwx.step / bc807-16lwx.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (16 pp, sha256 adcaa59bfd8b6e0d, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF