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BC807-16LT3G

Public Made by Adom

by adom

onsemi Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsbc807-16lt3gfactory-2.0.0extractor-text
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Symbol & Footprint

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Datasheet

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Contents

README

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BC807-16LT3G

onsemi · Bipolar (BJT) · SOT-23

BC807-16LT3G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the general-purpose PNP transistor, rated with collector-base voltage VCBO −50 V and emitter-base voltage VEBO −5.0 V maximum.
2 EMITTER passive Emitter terminal of the PNP transistor, rated for collector-emitter voltage VCEO −45 V and continuous collector current IC −500 mA.
3 COLLECTOR passive Collector terminal of the PNP transistor, rated for continuous collector current IC −500 mA and collector-emitter voltage VCEO −45 V.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
DC Current Gain (BC807-16 variant) hFE 100 250 IC = -100 mA, VCE = -1.0 V 2
DC Current Gain hFE 40 IC = -500 mA, VCE = -1.0 V 2
Collector-Emitter Saturation Voltage VCE(sat) -0.7 V IC = -500 mA, IB = -50 mA 2
Base-Emitter On Voltage VBE(on) -1.2 V IC = -500 mA, VCE = -1.0 V 2
Collector Cutoff Current ICBO -100 nA VCB = -20 V 2
Collector Cutoff Current (TJ = 150°C) ICBO -5 A VCB = -20 V, TJ = 150°C 2
Collector-Emitter Breakdown Voltage V(BR)CEO -45 V IC = -10 mA 2
Collector-Emitter Breakdown Voltage V(BR)CES -50 V VEB = 0, IC = -10 A 2
Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE = -1.0 A 2
Current-Gain-Bandwidth Product fT 100 MHz IC = -10 mA, VCE = -5.0 Vdc, f = 100 MHz 2
Collector-Emitter Voltage VCEO -45 V 1
Collector-Base Voltage VCBO -50 V 1
Emitter-Base Voltage VEBO -5 V 1
Collector Current - Continuous IC -500 mAdc 1
Total Device Dissipation PD 225 mW FR-5 board (Note 1), TA = 25°C 1
Total Device Dissipation PD 300 mW Alumina substrate (Note 2), TA = 25°C 1
Thermal Resistance, Junction-to-Ambient RJA 436 °C/W FR-5 board (Note 1) 1
Thermal Resistance, Junction-to-Ambient RJA 417 °C/W Alumina substrate (Note 2) 1
Junction and Storage Temperature TJ, Tstg -55 150 °C 1

CAD (KiCad official)

  • Symbol: BC807-16LT3G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bc807-16lt3g-etched.step / bc807-16lt3g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc807-16lt3g.step / bc807-16lt3g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (11 pp, sha256 ec40f3b5f176eaaa, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF