component
BC807-16
Public Made by Adomby adom
hongjiacheng Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBC807-16
hongjiacheng · Bipolar (BJT) · SOT-23
BC807-16 from hongjiacheng, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | passive | Base terminal of the PNP transistor; the datasheet gives a maximum emitter-base voltage of -5.0 V (VEBO) and an emitter-base cut-off current of -100 nA max at VEB=-4.0 V. |
| 2 | E | passive | Emitter terminal of the PNP transistor; the datasheet rates the emitter-base voltage at VEBO -5.0 V and the collector current at IC -0.5 A (BC807-16) with a maximum collector power dissipation of 300 mW. |
| 3 | C | passive | Collector terminal of the PNP transistor; rated VCBO -50 V and VCEO -45 V for BC807-16 (VCBO -30 V and VCEO -25 V for BC808), with collector current limited to -0.5 A for BC807-16. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | hongjiacheng |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | V(BR)CBO | -50 | V | IC=-10μA, IE=0 | 2 | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -45 | V | IC=-10mA, IB=0 | 2 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | -5 | V | IE=-10μA, IC=0 | 2 | ||
| Collector-Base cut-off current | ICBO | -100 | nA | VCB=-50V, IE=0 (BC807-16/25/40) | 2 | ||
| Emitter-Base cut-off current | IEBO | -100 | nA | VEB=-4.0V, IC=0 | 2 | ||
| DC Current Gain (BC807-16) | hFE(1) | 100 | 250 | IC=-100mA,VCE=-1.0V | 2 | ||
| DC Current Gain | hFE | 40 | IC=-500mA,VCE=-1.0V | 2 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.7 | V | IC=-500mA,IB=-50mA | 2 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | -1.2 | V | IC=-500mA ,IB=-50mA | 2 | ||
| Base-Emitter On Voltage | VBE(on) | -1.2 | V | IC=-300mA,VCE=-1.0V | 2 | ||
| Transition frequency | fT | 100 | MHz | IC=-10mA, VCE=-5.0V | 2 | ||
| Collector-Base Voltage | VCBO | -50 | V | 1 | |||
| Collector-Emitter Voltage | VCEO | -45 | V | 1 | |||
| Emitter-Base Voltage | VEBO | -5 | V | 1 | |||
| Collector Current | IC | -0.5 | A | 1 | |||
| Collector Power Dissipation | PC | 300 | mW | 1 | |||
| Storage temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Junction temperature | Tj | -55 | 150 | ℃ | 1 | ||
| Typical Thermal Resistance, junction to ambient | RθJ-A | 417 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
BC807-16 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
bc807-16-etched.step/bc807-16-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bc807-16.step/bc807-16.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: hongjiacheng datasheet (4 pp, sha256
a6ea44b396fb0c53, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).