component

BC806-25HVL

Public Made by Adom

by adom

Nexperia Bipolar (BJT), TO-236AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsbc806-25hvlfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 10d ago
viewers bc806-25hvl: viewers · Ray 10d ago
bc806-25hvl-etched.glb Publish 0.1.0 · Ray 10d ago
bc806-25hvl-etched.step bc806-25hvl: factory component page (tier=mfr) · Ray 10d ago
bc806-25hvl-hero.glb bc806-25hvl: hero GLB from the etched model (keeps the MPN mark) · Ray 10d ago
bc806-25hvl-hero.overlay.json Publish 0.1.0 · Ray 10d ago
bc806-25hvl.glb Publish 0.1.0 · Ray 10d ago
bc806-25hvl.kicad_mod Publish 0.1.0 · Ray 10d ago
bc806-25hvl.kicad_sym Publish 0.1.0 · Ray 10d ago
bc806-25hvl.lbr Publish 0.1.0 · Ray 10d ago
bc806-25hvl.step Publish 0.1.0 · Ray 10d ago
package.json Publish 0.1.0 · Ray 10d ago
page.json Set visibility: public · Ray 10d ago
README.md Publish 0.1.0 · Ray 10d ago

BC806-25HVL

Nexperia · Bipolar (BJT) · TO-236AB

BC806-25HVL from Nexperia, in a TO-236AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B passive Base terminal; the datasheet limits peak base current IBM to -200 mA (single pulse, tp ≤ 1 ms, Tamb = 25 °C).
2 E passive Emitter terminal; the emitter-base breakdown voltage V(BR)EBO is -8 V minimum at IE = -100 µA.
3 C passive Collector terminal; the datasheet limits collector current IC to -500 mA and VCEO to -80 V at Tamb = 25 °C.

Key specifications

Parameter Value
Manufacturer Nexperia
Package TO-236AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter voltage VCEO -80 V open base; Tamb = 25 °C 3
Collector-base voltage VCBO -80 V open emitter; Tamb = 25 °C 3
Emitter-base voltage VEBO -8 V open collector; Tamb = 25 °C 3
Collector current IC -500 mA Tamb = 25 °C 3
Peak collector current ICM -1 A single pulse; tp ≤ 1 ms; Tamb = 25 °C 3
Peak base current IBM -200 mA single pulse; tp ≤ 1 ms; Tamb = 25 °C 3
Total power dissipation Ptot 300 mW Tamb ≤ 25 °C; Tamb = 25 °C; [1] FR4 PCB standard footprint 3
Total power dissipation Ptot 415 mW Tamb ≤ 25 °C; [2] FR4 PCB mounting pad for collector 1 cm2 3
Junction temperature Tj 175 °C 3
Ambient temperature Tamb -55 175 °C 3
Storage temperature Tstg -65 175 °C 3
Thermal resistance from junction to ambient Rth(j-a) 500 K/W in free air; Tamb = 25 °C; [1] FR4 PCB standard footprint 4
Thermal resistance from junction to ambient Rth(j-a) 363 K/W in free air; Tamb = 25 °C; [2] FR4 PCB mounting pad for collector 1 cm2 4
Collector-base breakdown voltage V(BR)CBO -80 V IC = -100 µA; IE = 0 A; Tamb = 25 °C 5
Collector-emitter breakdown voltage V(BR)CEO -80 V IC = -2 mA; IE = 0 A; Tamb = 25 °C 5
Emitter-base breakdown voltage V(BR)EBO -8 V IE = -100 µA; IC = 0 A; Tamb = 25 °C 5
Collector-base cut-off current ICBO -100 nA VCB = -64 V; IE = 0 A; Tamb = 25 °C 5
Collector-base cut-off current ICBO -5 µA VCB = -64 V; IE = 0 A; Tj = 150 °C 5
Emitter-base cut-off current IEBO -100 nA VEB = -6.4 V; IC = 0 A; Tamb = 25 °C 5
DC current gain BC806-25H hFE 160 400 VCE = -1 V; IC = -100 mA; Tamb = 25 °C; [1] pulsed; tp ≤ 300 µs; δ ≤ 0.02 5
DC current gain hFE 30 VCE = -2 V; IC = -500 mA; Tamb = 25 °C; [1] pulsed; tp ≤ 300 µs; δ ≤ 0.02 5
Collector-emitter saturation voltage VCEsat -150 mV IC = -100 mA; IB = -10 mA; Tamb = 25 °C; [1] pulsed; tp ≤ 300 µs; δ ≤ 0.02 5
Collector-emitter saturation voltage VCEsat -400 mV IC = -500 mA; IB = -50 mA; Tamb = 25 °C; [1] pulsed; tp ≤ 300 µs; δ ≤ 0.02 5
Base-emitter voltage VBE -1.2 V VCE = -1 V; IC = -500 mA; Tamb = 25 °C; [1] pulsed; tp ≤ 300 µs; δ ≤ 0.02 5
Transition frequency fT 80 MHz VCE = -5 V; IC = -50 mA; f = 100 MHz; Tamb = 25 °C 5

CAD (KiCad official)

  • Symbol: BC806-25HVL
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: TO-236AB (KiCad packages3D, STEP)
  • 3D model files: bc806-25hvl-etched.step / bc806-25hvl-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc806-25hvl.step / bc806-25hvl.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (16 pp, sha256 d26458870b29ac67, retrieved 2026-10-26, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF