component
BC806-16HR
Public Made by Adomby adom
Nexperia Bipolar (BJT), TO-236AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownBC806-16HR
Nexperia · Bipolar (BJT) · TO-236AB
BC806-16HR from Nexperia, in a TO-236AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the PNP transistor; collector-base breakdown is -80 V and emitter-base breakdown is -8 V, with peak base current limited to -200 mA (single pulse, tp ≤ 1 ms). |
| 2 | E | passive | Emitter of the PNP transistor; VEBO maximum is -8 V (open collector). |
| 3 | C | passive | Collector of the PNP transistor; VCEO is -80 V (open base), IC is -500 mA continuous and ICM is -1 A peak (tp ≤ 1 ms). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | TO-236AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| collector-base breakdown voltage | V(BR)CBO | -80 | V | IC = -100 µA; IE = 0 A; Tamb = 25 °C | 5 | ||
| collector-emitter breakdown voltage | V(BR)CEO | -80 | V | IC = -2 mA; IE = 0 A; Tamb = 25 °C | 5 | ||
| emitter-base breakdown voltage | V(BR)EBO | -8 | V | IE = -100 µA; IC = 0 A; Tamb = 25 °C | 5 | ||
| collector-base cut-off current | ICBO | -100 | nA | VCB = -64 V; IE = 0 A; Tamb = 25 °C | 5 | ||
| collector-base cut-off current | ICBO | -5 | μA | VCB = -64 V; IE = 0 A; Tj = 150 °C | 5 | ||
| emitter-base cut-off current | IEBO | -100 | nA | VEB = -6.4 V; IC = 0 A; Tamb = 25 °C | 5 | ||
| DC current gain BC806-16H | hFE | 100 | 250 | VCE = -1 V; IC = -100 mA; Tamb = 25 °C; pulsed | 5 | ||
| DC current gain | hFE | 30 | VCE = -2 V; IC = -500 mA; Tamb = 25 °C; pulsed | 5 | |||
| collector-emitter saturation voltage | VCEsat | -150 | mV | IC = -100 mA; IB = -10 mA; Tamb = 25 °C; pulsed | 5 | ||
| collector-emitter saturation voltage | VCEsat | -400 | mV | IC = -500 mA; IB = -50 mA; Tamb = 25 °C; pulsed | 5 | ||
| base-emitter voltage | VBE | -1.2 | V | VCE = -1 V; IC = -500 mA; Tamb = 25 °C; pulsed | 5 | ||
| transition frequency | fT | 80 | MHz | VCE = -5 V; IC = -50 mA; f = 100 MHz; Tamb = 25 °C | 5 | ||
| collector capacitance | Cc | 5 | pF | VCB = -10 V; IE = ie = 0 A; f = 1 MHz; Tamb = 25 °C | 5 | ||
| emitter capacitance | Ce | 47 | pF | VEB = -0.5 V; IC = ic = 0 A; f = 1 MHz; Tamb = 25 °C | 5 | ||
| collector-base voltage | VCBO | -80 | V | open emitter; Tamb = 25 °C | 3 | ||
| collector-emitter voltage | VCEO | -80 | V | open base; Tamb = 25 °C | 3 | ||
| emitter-base voltage | VEBO | -8 | V | open collector; Tamb = 25 °C | 3 | ||
| collector current | IC | -500 | mA | Tamb = 25 °C | 3 | ||
| peak collector current | ICM | -1 | A | single pulse; tp ≤ 1 ms; Tamb = 25 °C | 3 | ||
| peak base current | IBM | -200 | mA | single pulse; tp ≤ 1 ms; Tamb = 25 °C | 3 | ||
| total power dissipation (standard footprint) | Ptot | 300 | mW | Tamb ≤ 25 °C; FR4 PCB, standard footprint | 3 | ||
| total power dissipation (1 cm2 collector pad) | Ptot | 415 | mW | Tamb ≤ 25 °C; FR4 PCB, 1 cm2 collector mounting pad | 3 | ||
| junction temperature | Tj | 175 | °C | 3 | |||
| ambient temperature | Tamb | -55 | 175 | °C | 3 | ||
| storage temperature | Tstg | -65 | 175 | °C | 3 | ||
| thermal resistance junction to ambient (standard footprint) | Rth(j-a) | 500 | K/W | in free air; FR4 PCB, standard footprint | 4 | ||
| thermal resistance junction to ambient (1 cm2 collector pad) | Rth(j-a) | 363 | K/W | in free air; FR4 PCB, 1 cm2 collector mounting pad | 4 |
CAD (KiCad official)
- Symbol:
BC806-16HR - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: TO-236AB (KiCad packages3D, STEP)
- 3D model files:
bc806-16hr-etched.step/bc806-16hr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bc806-16hr.step/bc806-16hr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (16 pp, sha256
d26458870b29ac67, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).