component
BC557
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Changjiang Electronics Tech (CJ) Bipolar Transistors - BJT, TO-92. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BC557
Changjiang Electronics Tech (CJ) · Bipolar Transistors - BJT · TO-92
BC557 from Changjiang Electronics Tech (CJ), in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | COLLECTOR | passive | Collector of the PNP transistor; BC557 VCEO is -45 V, VCBO is -50 V and continuous collector current is -0.1 A. |
| 2 | BASE | passive | Base of the PNP transistor; BC557 emitter-base voltage limit VEBO is -5 V. |
| 3 | EMITTER | passive | Emitter of the PNP transistor; total device power dissipation is 625 mW at Ta=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjiang Electronics Tech (CJ) |
| Package | TO-92 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | -50 | V | IC=-0.1mA, IE=0 | 2 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | -45 | V | IC=-2mA, IB=0 | 2 | ||
| Emitter-base breakdown voltage | V(BR)EBO | -5 | V | IE=-100μA, IC=0 | 2 | ||
| Collector cut-off current | ICBO | -0.1 | μA | VCB=-45V, IE=0 | 2 | ||
| Emitter cut-off current | IEBO | -0.1 | μA | VEB=-5V, IC=0 | 2 | ||
| DC current gain | hFE | 120 | 800 | VCE=-5V, IC=-2mA | 2 | ||
| Collector-emitter saturation voltage | VCE(sat) | -0.3 | V | IC=-10mA, IB=-0.5mA | 2 | ||
| Collector-emitter saturation voltage | VCE(sat) | -0.65 | V | IC=-100mA, IB=-5mA | 2 | ||
| Base-emitter saturation voltage | VBE(sat) | -0.8 | V | IC=-10mA, IB=-0.5mA | 2 | ||
| Base-emitter saturation voltage | VBE(sat) | -1 | V | IC=-100mA, IB=-5mA | 2 | ||
| Base-emitter voltage | VBE | -0.55 | -0.7 | V | VCE=-5V, IC=-2mA | 2 | |
| Transition frequency | fT | 150 | MHz | VCE=-5V, IC=-10mA, f=100MHz | 2 | ||
| Collector-base voltage | VCBO | -50 | V | Ta=25℃ | 1 | ||
| Collector-emitter voltage | VCEO | -45 | V | Ta=25℃ | 1 | ||
| Emitter-base voltage | VEBO | -5 | V | Ta=25℃ | 1 | ||
| Collector current-continuous | IC | -0.1 | A | Ta=25℃ | 1 | ||
| Collector power dissipation | PC | 625 | mW | Ta=25℃ | 1 | ||
| Junction temperature | Tj | 150 | ℃ | 1 | |||
| Storage temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal resistance from junction to ambient | RθJA | 200 | ℃/W | 1 | |||
| Base-emitter voltage | VBE | -0.82 | V | VCE=-5V, IC=-10mA | 2 | ||
| Collector output capacitance | Cob | 6 | pF | VCB=-10V, IE=0, f=1MHz | 2 |
CAD (KiCad official)
- Symbol:
BC557 - Footprint:
Package_TO_SOT_THT:TO-92_Inline - 3D model: TO-92 (KiCad packages3D, STEP)
- 3D model files:
bc557-etched.step/bc557-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bc557.step/bc557.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjiang Electronics Tech (CJ) datasheet (4 pp, sha256
81775b75ec2ea3df, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BC557
**Changjiang Electronics Tech (CJ)** · Bipolar Transistors - BJT · TO-92
BC557 from Changjiang Electronics Tech (CJ), in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | COLLECTOR | passive | Collector of the PNP transistor; BC557 VCEO is -45 V, VCBO is -50 V and continuous collector current is -0.1 A. |
| 2 | BASE | passive | Base of the PNP transistor; BC557 emitter-base voltage limit VEBO is -5 V. |
| 3 | EMITTER | passive | Emitter of the PNP transistor; total device power dissipation is 625 mW at Ta=25°C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjiang Electronics Tech (CJ) |
| Package | TO-92 |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | -50 | | | V | IC=-0.1mA, IE=0 | 2 |
| Collector-emitter breakdown voltage | V(BR)CEO | -45 | | | V | IC=-2mA, IB=0 | 2 |
| Emitter-base breakdown voltage | V(BR)EBO | -5 | | | V | IE=-100μA, IC=0 | 2 |
| Collector cut-off current | ICBO | | | -0.1 | μA | VCB=-45V, IE=0 | 2 |
| Emitter cut-off current | IEBO | | | -0.1 | μA | VEB=-5V, IC=0 | 2 |
| DC current gain | hFE | 120 | | 800 | | VCE=-5V, IC=-2mA | 2 |
| Collector-emitter saturation voltage | VCE(sat) | | | -0.3 | V | IC=-10mA, IB=-0.5mA | 2 |
| Collector-emitter saturation voltage | VCE(sat) | | | -0.65 | V | IC=-100mA, IB=-5mA | 2 |
| Base-emitter saturation voltage | VBE(sat) | | | -0.8 | V | IC=-10mA, IB=-0.5mA | 2 |
| Base-emitter saturation voltage | VBE(sat) | | | -1 | V | IC=-100mA, IB=-5mA | 2 |
| Base-emitter voltage | VBE | -0.55 | | -0.7 | V | VCE=-5V, IC=-2mA | 2 |
| Transition frequency | fT | 150 | | | MHz | VCE=-5V, IC=-10mA, f=100MHz | 2 |
| Collector-base voltage | VCBO | | | -50 | V | Ta=25℃ | 1 |
| Collector-emitter voltage | VCEO | | | -45 | V | Ta=25℃ | 1 |
| Emitter-base voltage | VEBO | | | -5 | V | Ta=25℃ | 1 |
| Collector current-continuous | IC | | | -0.1 | A | Ta=25℃ | 1 |
| Collector power dissipation | PC | | | 625 | mW | Ta=25℃ | 1 |
| Junction temperature | Tj | | | 150 | ℃ | | 1 |
| Storage temperature | Tstg | -55 | | 150 | ℃ | | 1 |
| Thermal resistance from junction to ambient | RθJA | | 200 | | ℃/W | | 1 |
| Base-emitter voltage | VBE | | -0.82 | | V | VCE=-5V, IC=-10mA | 2 |
| Collector output capacitance | Cob | | 6 | | pF | VCB=-10V, IE=0, f=1MHz | 2 |
## CAD (KiCad official)
- Symbol: `BC557`
- Footprint: `Package_TO_SOT_THT:TO-92_Inline`
- 3D model: TO-92 (KiCad packages3D, STEP)
- 3D model files: `bc557-etched.step` / `bc557-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bc557.step` / `bc557.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Changjiang Electronics Tech (CJ) datasheet](docs/bc557-datasheet.pdf) (4 pp, sha256 `81775b75ec2ea3df`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bc557-datasheet.pdf)