component
BC547CBK
Public Made by Adomby adom
DIOTEC Bipolar (BJT), TO-92. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BC547CBK
DIOTEC · Bipolar (BJT) · TO-92
BC547CBK from DIOTEC, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | C | passive | Collector of the NPN transistor; for the BC547 group, VCEO is 45 V, VCBO 50 V, dc collector current 100 mA with 200 mA peak, and Ptot 500 mW (valid with leads at ambient temperature 2 mm from the case). |
| 2 | B | passive | Base of the NPN transistor; peak base current is limited to 200 mA and the emitter-base voltage VEB0 is 5 V. |
| 3 | E | passive | Emitter of the NPN transistor; peak emitter current is limited to 200 mA and the emitter-base voltage VEB0 is 5 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | DIOTEC |
| Package | TO-92 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter voltage (E-B short) | VCES | 50 | V | BC547 column | 1 | ||
| Collector-Emitter voltage (B open) | VCEO | 45 | V | BC547 column | 1 | ||
| Collector-Base voltage (E open) | VCBO | 50 | V | BC547 column | 1 | ||
| Emitter-Base voltage (C open) | VEB0 | 5 | V | all types | 1 | ||
| Collector current (dc) | IC | 100 | mA | 1 | |||
| Peak collector current | ICM | 200 | mA | 1 | |||
| Peak base current | IBM | 200 | mA | 1 | |||
| Peak emitter current | IEM | 200 | mA | 1 | |||
| Power dissipation | Ptot | 500 | mW | leads kept at ambient temperature at a distance of 2 mm from case (footnote 1) | 1 | ||
| Junction temperature | Tj | -55 | 150 | °C | 1 | ||
| Storage temperature | TS | -55 | 150 | °C | 1 | ||
| Thermal resistance junction to ambient air | RthA | 200 | K/W | leads at ambient temperature at 2 mm from case (footnote 1) | 2 | ||
| Collector-Emitter cutoff current | ICES | 0.2 | 15 | nA | VCE = 50 V, (B-E short) | 2 | |
| Collector-Emitter cutoff current at Tj = 125°C | ICES | 4 | µA | VCE = 50 V, Tj = 125°C, (B-E short) | 2 | ||
| Collector-Emitter saturation voltage | VCEsat | 200 | mV | IC = 10 mA, IB = 0.5 mA | 2 | ||
| Collector-Emitter saturation voltage | VCEsat | 600 | mV | IC = 100 mA, IB = 5 mA | 2 | ||
| Base saturation voltage | VBEsat | 700 | mV | IC = 10 mA, IB = 0.5 mA | 2 | ||
| Base saturation voltage | VBEsat | 900 | mV | IC = 100 mA, IB = 5 mA | 2 | ||
| Base-Emitter voltage | VBE | 580 | 660 | mV | VCE = 5 V, IC = 2 mA | 2 | |
| Base-Emitter voltage | VBE | 700 | 720 | mV | VCE = 5 V, IC = 10 mA | 2 | |
| DC current gain (Group C) | hFE | 420 | 800 | VCE = 5 V, IC = 2 mA | 1 | ||
| DC current gain (Group C) | hFE | 270 | VCE = 5 V, IC = 10 µA | 1 | |||
| DC current gain (Group C) | hFE | 400 | VCE = 5 V, IC = 100 mA | 1 | |||
| Small signal current gain (Group C) | hfe | 600 | VCE = 5 V, IC = 2 mA, f = 1 kHz | 1 | |||
| Input impedance (Group C) | hie | 6 | 15 | kΩ | VCE = 5 V, IC = 2 mA, f = 1 kHz | 1 | |
| Output admittance (Group C) | hoe | 60 | 110 | µS | VCE = 5 V, IC = 2 mA, f = 1 kHz | 1 | |
| Gain-bandwidth product | fT | 300 | MHz | VCE = 5 V, IC = 10 mA, f = 100 MHz | 2 | ||
| Collector-Base capacitance | CCBO | 3.5 | 6 | pF | VCB = 10 V, IE = ie = 0, f = 1 MHz | 2 | |
| Emitter-Base capacitance | CEB0 | 9 | pF | VEB = 0.5 V, IC = ic = 0, f = 1 MHz | 2 | ||
| Noise figure (BC546/BC547) | F | 2 | 10 | dB | VCE = 5 V, IC = 200 µA, RG = 2 kΩ, f = 1 kHz, Δf = 200 Hz | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | silver | affect human life or health, user shall contact in advance Diotec Semiconductor AG's Managing Board (Heitersheim, Germany) to | 3 |
CAD (KiCad official)
- Symbol:
BC547CBK - Footprint:
Package_TO_SOT_THT:TO-92_Inline - 3D model: TO-92 (KiCad packages3D, STEP)
- 3D model files:
bc547cbk-etched.step/bc547cbk-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bc547cbk.step/bc547cbk.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: DIOTEC datasheet (3 pp, sha256
889a83aa8ac5ef11, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BC547CBK
**DIOTEC** · Bipolar (BJT) · TO-92
BC547CBK from DIOTEC, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | C | passive | Collector of the NPN transistor; for the BC547 group, VCEO is 45 V, VCBO 50 V, dc collector current 100 mA with 200 mA peak, and Ptot 500 mW (valid with leads at ambient temperature 2 mm from the case). |
| 2 | B | passive | Base of the NPN transistor; peak base current is limited to 200 mA and the emitter-base voltage VEB0 is 5 V. |
| 3 | E | passive | Emitter of the NPN transistor; peak emitter current is limited to 200 mA and the emitter-base voltage VEB0 is 5 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | DIOTEC |
| Package | TO-92 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter voltage (E-B short) | VCES | | | 50 | V | BC547 column | 1 |
| Collector-Emitter voltage (B open) | VCEO | | | 45 | V | BC547 column | 1 |
| Collector-Base voltage (E open) | VCBO | | | 50 | V | BC547 column | 1 |
| Emitter-Base voltage (C open) | VEB0 | | | 5 | V | all types | 1 |
| Collector current (dc) | IC | | | 100 | mA | | 1 |
| Peak collector current | ICM | | | 200 | mA | | 1 |
| Peak base current | IBM | | | 200 | mA | | 1 |
| Peak emitter current | IEM | | | 200 | mA | | 1 |
| Power dissipation | Ptot | | | 500 | mW | leads kept at ambient temperature at a distance of 2 mm from case (footnote 1) | 1 |
| Junction temperature | Tj | -55 | | 150 | °C | | 1 |
| Storage temperature | TS | -55 | | 150 | °C | | 1 |
| Thermal resistance junction to ambient air | RthA | | | 200 | K/W | leads at ambient temperature at 2 mm from case (footnote 1) | 2 |
| Collector-Emitter cutoff current | ICES | | 0.2 | 15 | nA | VCE = 50 V, (B-E short) | 2 |
| Collector-Emitter cutoff current at Tj = 125°C | ICES | | | 4 | µA | VCE = 50 V, Tj = 125°C, (B-E short) | 2 |
| Collector-Emitter saturation voltage | VCEsat | | | 200 | mV | IC = 10 mA, IB = 0.5 mA | 2 |
| Collector-Emitter saturation voltage | VCEsat | | | 600 | mV | IC = 100 mA, IB = 5 mA | 2 |
| Base saturation voltage | VBEsat | | | 700 | mV | IC = 10 mA, IB = 0.5 mA | 2 |
| Base saturation voltage | VBEsat | | | 900 | mV | IC = 100 mA, IB = 5 mA | 2 |
| Base-Emitter voltage | VBE | 580 | | 660 | mV | VCE = 5 V, IC = 2 mA | 2 |
| Base-Emitter voltage | VBE | | 700 | 720 | mV | VCE = 5 V, IC = 10 mA | 2 |
| DC current gain (Group C) | hFE | 420 | | 800 | | VCE = 5 V, IC = 2 mA | 1 |
| DC current gain (Group C) | hFE | | 270 | | | VCE = 5 V, IC = 10 µA | 1 |
| DC current gain (Group C) | hFE | | 400 | | | VCE = 5 V, IC = 100 mA | 1 |
| Small signal current gain (Group C) | hfe | | 600 | | | VCE = 5 V, IC = 2 mA, f = 1 kHz | 1 |
| Input impedance (Group C) | hie | 6 | | 15 | kΩ | VCE = 5 V, IC = 2 mA, f = 1 kHz | 1 |
| Output admittance (Group C) | hoe | | 60 | 110 | µS | VCE = 5 V, IC = 2 mA, f = 1 kHz | 1 |
| Gain-bandwidth product | fT | | 300 | | MHz | VCE = 5 V, IC = 10 mA, f = 100 MHz | 2 |
| Collector-Base capacitance | CCBO | | 3.5 | 6 | pF | VCB = 10 V, IE = ie = 0, f = 1 MHz | 2 |
| Emitter-Base capacitance | CEB0 | | 9 | | pF | VEB = 0.5 V, IC = ic = 0, f = 1 MHz | 2 |
| Noise figure (BC546/BC547) | F | | 2 | 10 | dB | VCE = 5 V, IC = 200 µA, RG = 2 kΩ, f = 1 kHz, Δf = 200 Hz | 2 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | | silver | affect human life or health, user shall contact in advance Diotec Semiconductor AG's Managing Board (Heitersheim, Germany) to | 3 |
## CAD (KiCad official)
- Symbol: `BC547CBK`
- Footprint: `Package_TO_SOT_THT:TO-92_Inline`
- 3D model: TO-92 (KiCad packages3D, STEP)
- 3D model files: `bc547cbk-etched.step` / `bc547cbk-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bc547cbk.step` / `bc547cbk.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [DIOTEC datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590454666191265792) (3 pp, sha256 `889a83aa8ac5ef11`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bc547cbk-datasheet.pdf)