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Ray Publish 0.1.0 6f5eaf1 6h ago

BC546BTF

onsemi · Bipolar Transistors - BJT · TO-92-3

BC546BTF from onsemi, in a TO-92-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Collector passive Collector of the NPN transistor; the datasheet rates collector current (DC) at 100 mA maximum and collector-base voltage at 80 V for BC546.
2 Base passive Base of the NPN transistor; the datasheet rates emitter-base voltage at 6 V for BC546 (BC546/BC547) and 5 V for BC548/BC549/BC550.
3 Emitter passive Emitter of the NPN transistor; the datasheet's absolute maximum ratings limit it through the emitter-base voltage (6 V for BC546, 5 V for BC548/BC549/BC550) and junction temperature of 150 °C.

Key specifications

Parameter Value
Manufacturer onsemi
Package TO-92-3
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage (BC546) VCBO 80 V 3
Collector-Emitter Voltage (BC546) VCEO 65 V 3
Emitter-Base Voltage (BC546/BC547) VEBO 6 V 3
Collector Current (DC) IC 100 mA 3
Collector Power Dissipation PC 500 mW 3
Junction Temperature TJ 150 °C 3
Storage Temperature Range TSTG -65 150 °C 3
Collector Cut-Off Current ICBO 15 nA VCB = 30 V, IE = 0 3
DC Current Gain hFE 110 800 VCE = 5 V, IC = 2 mA 3
DC Current Gain (classification B) hFE 200 450 3
Collector-Emitter Saturation Voltage VCE(sat) 90 250 mV IC = 10 mA, IB = 0.5 mA 3
Collector-Emitter Saturation Voltage VCE(sat) 250 600 mV IC = 100 mA, IB = 5 mA 3
Base-Emitter Saturation Voltage VBE(sat) 700 mV IC = 10 mA, IB = 0.5 mA 3
Base-Emitter Saturation Voltage VBE(sat) 900 mV IC = 100 mA, IB = 5 mA 3
Base-Emitter On Voltage VBE(on) 580 660 700 mV VCE = 5 V, IC = 2 mA 3
Base-Emitter On Voltage VBE(on) 720 mV VCE = 5 V, IC = 10 mA 3
Current Gain Bandwidth Product fT 300 MHz VCE = 5 V, IC = 10 mA, f = 100 MHz 3
Output Capacitance Cob 3.5 6 pF VCB = 10 V, IE = 0, f = 1 MHz 3
Input Capacitance Cib 9 pF VEB = 0.5 V, IC = 0, f = 1 MHz 3
Noise Figure (BC546/BC547/BC548 row) NF 2 10 dB VCE = 5 V, IC = 200 μA, f = 1 kHz, RG = 2 kΩ 3

CAD (KiCad official)

  • Symbol: BC546BTF
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92-3 (KiCad packages3D, STEP)
  • 3D model files: bc546btf-etched.step / bc546btf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc546btf.step / bc546btf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (8 pp, sha256 e75c6bde7cc28fa7, retrieved 2026-11-05, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF