component
BC33725TA
Public Made by Adomby adom
onsemi Bipolar Transistors - BJT, TO-92-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 13d ago |
| viewers | 13d ago |
| bc33725ta-etched.glb | 13d ago |
| bc33725ta-etched.step | 13d ago |
| bc33725ta-hero.glb | 13d ago |
| bc33725ta-hero.overlay.json | 13d ago |
| bc33725ta.glb | 13d ago |
| bc33725ta.kicad_mod | 13d ago |
| bc33725ta.kicad_sym | 13d ago |
| bc33725ta.lbr | 13d ago |
| bc33725ta.step | 13d ago |
| package.json | 13d ago |
| page.json | 13d ago |
| README.md | 13d ago |
BC33725TA
onsemi · Bipolar Transistors - BJT · TO-92-3
BC33725TA from onsemi, in a TO-92-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Collector | passive | Collector of the NPN transistor; VCEO 45 V (BC337), IC up to 800 mA DC. |
| 2 | Base | passive | Base of the NPN transistor; emitter-base voltage VEBO max 5 V. |
| 3 | Emitter | passive | Emitter of the NPN transistor; emitter-base breakdown voltage 5 V at IE = 0.1 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | TO-92-3 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | BVCEO | 45 | V | IC = 10 mA, IB = 0 (BC337) | 3 | ||
| Collector-Emitter Breakdown Voltage | BVCES | 50 | V | IC = 0.1 mA, VBE = 0 (BC337) | 3 | ||
| Emitter-Base Breakdown Voltage | BVEBO | 5 | V | IE = 0.1 mA, IC = 0 | 3 | ||
| Collector Cut-Off Current | ICES | 2 | 100 | nA | VCE = 45 V, IB = 0 (BC337) | 3 | |
| DC Current Gain (grade 25) | hFE1 | 160 | 400 | VCE = 1 V, IC = 100 mA | 3 | ||
| DC Current Gain (grade 25) | hFE2 | 100 | VCE = 1 V, IC = 300 mA | 3 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.7 | V | IC = 500 mA, IB = 50 mA | 3 | ||
| Base-Emitter On Voltage | VBE(on) | 1.2 | V | VCE = 1 V, IC = 300 mA | 3 | ||
| Current Gain Bandwidth Product | fT | 100 | MHz | VCE = 5 V, IC = 10 mA, f = 50 MHz | 3 | ||
| Output Capacitance | Cob | 12 | pF | VCB = 10 V, IE = 0, f = 1 MHz | 3 | ||
| Collector-Emitter Voltage | VCES | 50 | V | BC337, TA = 25°C | 2 | ||
| Collector-Emitter Voltage | VCEO | 45 | V | BC337, TA = 25°C | 2 | ||
| Emitter-Base Voltage | VEBO | 5 | V | TA = 25°C | 2 | ||
| Collector Current (DC) | IC | 800 | mA | TA = 25°C | 2 | ||
| Junction Temperature | TJ | 150 | °C | 2 | |||
| Storage Temperature | TSTG | -55 | 150 | °C | 2 | ||
| Power Dissipation | PD | 625 | mW | TA = 25°C, FR-4 PCB 76 mm x 114 mm x 1.57 mm, minimum land pattern | 3 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 200 | °C/W | FR-4 PCB 76 mm x 114 mm x 1.57 mm, minimum land pattern | 3 |
CAD (KiCad official)
- Symbol:
BC33725TA - Footprint:
Package_TO_SOT_THT:TO-92_Inline - 3D model: TO-92-3 (KiCad packages3D, STEP)
- 3D model files:
bc33725ta-etched.step/bc33725ta-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bc33725ta.step/bc33725ta.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (7 pp, sha256
458c4e685dcea574, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).