component

BC33716BU

Public Made by Adom

by adom

onsemi Bipolar (BJT), TO-92. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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BC33716BU

onsemi · Bipolar (BJT) · TO-92

BC33716BU from onsemi, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Collector passive Collector terminal of the NPN transistor; the datasheet rates collector current at 800 mA DC maximum and collector-emitter voltage at 50 V (BC337) or 30 V (BC338) VCES.
2 Base passive Base terminal of the NPN transistor; the datasheet gives no base-specific limit, only the emitter-base breakdown of 5 V (IE = 0.1 mA).
3 Emitter passive Emitter terminal of the NPN transistor; the emitter-base voltage rating is 5 V.

Key specifications

Parameter Value
Manufacturer onsemi
Package TO-92
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage (BC337) BVCEO 45 V IC = 10 mA, IB = 0 3
Collector-Emitter Breakdown Voltage (BC337) BVCES 50 V IC = 0.1 mA, VBE = 0 3
Emitter-Base Breakdown Voltage BVEBO 5 V IE = 0.1 mA, IC = 0 3
Collector Cut-Off Current (BC337) ICES 2 100 nA VCE = 45 V, IB = 0 3
DC Current Gain hFE1 hFE1 100 630 VCE = 1 V, IC = 100 mA 3
DC Current Gain hFE2 hFE2 60 VCE = 1 V, IC = 300 mA 3
Collector-Emitter Saturation Voltage VCE(sat) 0.7 V IC = 500 mA, IB = 50 mA 3
Base-Emitter On Voltage VBE(on) 1.2 V VCE = 1 V, IC = 300 mA 3
Current Gain Bandwidth Product fT 100 MHz VCE = 5 V, IC = 10 mA, f = 50 MHz 3
Output Capacitance Cob 12 pF VCB = 10 V, IE = 0, f = 1 MHz 3
Collector-Emitter Voltage (BC337) VCES 50 V 2
Collector-Emitter Voltage (BC337) VCEO 45 V 2
Emitter-Base Voltage VEBO 5 V 2
Collector Current (DC) IC 800 mA 2
Junction Temperature TJ 150 °C 2
Storage Temperature TSTG -55 150 °C 2
Power Dissipation PD 625 mW TA = 25°C 3
Thermal Resistance, Junction-to-Ambient RθJA 200 °C/W 3

CAD (KiCad official)

  • Symbol: BC33716BU
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92 (KiCad packages3D, STEP)
  • 3D model files: bc33716bu-etched.step / bc33716bu-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc33716bu.step / bc33716bu.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (7 pp, sha256 0751905040670898, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF