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Ray Publish 0.1.0 6f6f432 9d ago

BAW56WT1G

onsemi · Switching Diodes · SOT-323

BAW56WT1G from onsemi, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 CATHODE passive Cathode of one of the two diodes in the common-anode dual switching diode (SC-70 Style 4 pin assignment).
2 CATHODE passive Cathode of the second diode in the common-anode dual switching diode (SC-70 Style 4 pin assignment).
3 ANODE passive Common anode shared by both diodes, per the SC-70 Style 4 pin assignment and the device marking diagram on page 1.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-323
Category Diodes
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Reverse Breakdown Voltage V(BR) 70 V I(BR) = 100 μA 2
Reverse Voltage Leakage Current IR 30 μA VR = 25 V, TJ = 150°C 2
Reverse Voltage Leakage Current IR 2.5 μA VR = 70 V 2
Reverse Voltage Leakage Current IR 50 μA VR = 70 V, TJ = 150°C 2
Diode Capacitance CD 2 pF VR = 0, f = 1.0 MHz 2
Forward Voltage VF 715 mV IF = 1.0 mA 2
Forward Voltage VF 855 mV IF = 10 mA 2
Forward Voltage VF 1000 mV IF = 50 mA 2
Forward Voltage VF 1250 mV IF = 150 mA 2
Reverse Recovery Time trr 6 ns IF = IR = 10 mA, RL = 100 (glyph as printed), IR(REC) = 1.0 mA 2
Reverse Voltage VR 70 V TA = 25°C 1
Forward Current IF 200 mA TA = 25°C 1
Peak Forward Surge Current IFM(surge) 500 mA TA = 25°C 1
Forward Surge Max Current (Single Square Wave), first value IFSM 4 A Single square wave; pulse width mapping per review_required 1
Forward Surge Max Current (Single Square Wave), second value IFSM 1 A Single square wave; pulse width mapping per review_required 1
Forward Surge Max Current (Single Square Wave), third value IFSM 0.5 A Single square wave; pulse width mapping per review_required 1
Total Device Dissipation, FR-5 Board PD 200 mW TA = 25°C, FR-5 board (Note 1) 1
Derate above 25°C, FR-5 Board PD 1.6 mW/°C Derate above 25°C, FR-5 board (Note 1) 1
Thermal Resistance, Junction-to-Ambient, FR-5 Board RJA 625 °C/W FR-5 board (Note 1) 1
Total Device Dissipation, Alumina Substrate PD 300 mW TA = 25°C, alumina substrate (Note 2) 1
Derate above 25°C, Alumina Substrate PD 2.4 mW/°C Derate above 25°C, alumina substrate (Note 2) 1
Thermal Resistance, Junction-to-Ambient, Alumina Substrate RJA 417 °C/W Alumina substrate (Note 2) 1
Junction and Storage Temperature TJ, Tstg -55 150 °C 1

CAD (KiCad official)

  • Symbol: BAW56WT1G
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: baw56wt1g-etched.step / baw56wt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); baw56wt1g.step / baw56wt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (5 pp, sha256 3525a63a274f5a4a, retrieved 2026-10-18, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF