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Contents

README

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BAW56S

Nexperia · Switching Diodes · SOT-363

BAW56S from Nexperia, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 K1 passive Cathode of diode 1; the per-diode repetitive peak reverse voltage is 90 V maximum.
2 K2 passive Cathode of diode 2; the per-diode repetitive peak reverse voltage is 90 V maximum.
3 A3; A4 passive Common anode shared by diode 3 and diode 4.
4 K3 passive Cathode of diode 3; the per-diode repetitive peak reverse voltage is 90 V maximum.
5 K4 passive Cathode of diode 4; the per-diode repetitive peak reverse voltage is 90 V maximum.
6 A1; A2 passive Common anode shared by diode 1 and diode 2.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-363
Category Diodes
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
repetitive peak reverse voltage (per diode) VRRM 90 V 2
reverse voltage (per diode) VR 90 V 2
forward current (per diode) IF 250 mA Ts = 60 °C 2
non-repetitive peak forward current IFSM 4 A tp = 1 µs; square wave; Tj(init) = 25 °C 2
non-repetitive peak forward current IFSM 1 A tp = 1 ms; square wave; Tj(init) = 25 °C 2
non-repetitive peak forward current IFSM 0.5 A tp = 1 s; square wave; Tj(init) = 25 °C 2
repetitive peak forward current (per diode) IFRM 500 mA 2
total power dissipation (per diode) Ptot 350 mW Ts = 60 °C [1] 2
forward current (per device) IF 100 mA Ts = 60 °C 2
junction temperature Tj 150 °C 2
ambient temperature Tamb -65 150 °C 2
storage temperature Tstg -65 150 °C 2
thermal resistance from junction to solder point Rth(j-sp) 255 K/W 2
forward voltage VF 715 mV IF = 1 mA; tp ≤ 300 µs; δ ≤ 0.02; pulsed; Tamb = 25 °C 3
forward voltage VF 855 mV IF = 10 mA; tp ≤ 300 µs; δ ≤ 0.02; pulsed; Tamb = 25 °C 3
forward voltage VF 1 V IF = 50 mA; tp ≤ 300 µs; δ ≤ 0.02; pulsed; Tamb = 25 °C 3
forward voltage VF 1.25 V IF = 150 mA; tp ≤ 300 µs; δ ≤ 0.02; pulsed; Tamb = 25 °C 3
reverse current IR 30 nA VR = 25 V; Tamb = 25 °C 3
reverse current IR 0.5 µA VR = 80 V; Tamb = 25 °C 3
reverse current IR 30 µA VR = 25 V; Tj = 150 °C 3
reverse current IR 150 µA VR = 80 V; Tj = 150 °C 3
diode capacitance Cd 2 pF VR = 0 V; f = 1 MHz; Tamb = 25 °C 3
reverse recovery time trr 4 ns IF = 10 mA; IR = 10 mA; RL = 100 Ω; IR(meas) = 1 mA; Tamb = 25 °C 3
peak forward recovery voltage VFRM 1.75 V IF = 10 mA; tr = 20 ns; Tamb = 25 °C 3

CAD (KiCad official)

  • Symbol: BAW56S
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: baw56s-etched.step / baw56s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); baw56s.step / baw56s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (9 pp, sha256 d8b35b2291d31ba6, retrieved 2026-10-16, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF