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BAW101S

Public Made by Adom

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Nexperia Diodes - General Purpose, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BAW101S

Nexperia · Diodes - General Purpose · SOT-363

BAW101S from Nexperia, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A1 passive Anode of diode 1; the two diodes are electrically insulated from each other, and per-diode limits are VR 300 V and IF 250 mA (single diode loaded).
2 n.c. unconnected Not connected.
3 K2 passive Cathode of diode 2; the two diodes are electrically insulated from each other, and per-diode limits are VR 300 V and IF 250 mA (single diode loaded).
4 A2 passive Anode of diode 2; the two diodes are electrically insulated from each other, and per-diode limits are VR 300 V and IF 250 mA (single diode loaded).
5 n.c. unconnected No connection.
6 K1 passive Cathode of diode 1; the two diodes are electrically insulated from each other, and per-diode limits are VR 300 V and IF 250 mA (single diode loaded).

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-363
Category Diodes
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
reverse voltage (300 V rating) VR 300 V 2
repetitive peak reverse voltage (300 V rating) VRRM 300 V 2
forward current IF 250 mA single diode loaded [1] 2
forward current IF 140 mA double diode loaded [1] 2
repetitive peak forward current IFRM 625 mA 2
non-repetitive peak forward current IFSM 4.5 A tp = 1 µs; square wave; Tj(init) = 25 °C 2
total power dissipation Ptot 350 mW Tamb ≤ 25 °C [1] 2
junction temperature Tj 150 °C 2
ambient temperature Tamb -65 150 °C 2
storage temperature Tstg -65 150 °C 2
thermal resistance from junction to ambient Rth(j-a) 357 K/W in free air [1] 3
thermal resistance from junction to solder point Rth(j-sp) 255 K/W one or more diodes loaded [2] 3
reverse breakdown voltage V(BR)R 300 V IR = 100 µA; Tj = 25 °C 3
forward voltage VF 1.1 V IF = 100 mA; tp = 300 µs; δ = 0.02; pulsed; Tj = 25 °C 3
reverse current IR 150 nA VR = 250 V; Tj = 25 °C 3
reverse current IR 50 µA VR = 250 V; Tamb = 150 °C 3
diode capacitance Cd 2 pF VR = 0 V; f = 1 MHz; Tj = 25 °C 3
reverse recovery time trr 50 ns IF = 30 mA; IR = 30 mA; RL = 100 Ω; Tj = 25 °C; measured at IR = 3 mA 3

CAD (KiCad official)

  • Symbol: BAW101S
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: baw101s-etched.step / baw101s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); baw101s.step / baw101s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (9 pp, sha256 d6d837ed73755d60, retrieved 2026-10-17, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF