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Ray Publish 0.1.0 fc666fa 9d ago

BAV99S

Nexperia · Switching Diodes · SOT-363

BAV99S from Nexperia, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A1 passive Anode of diode 1; this pin is a diode terminal of the dual-diode device.
2 K2 passive Cathode of diode 2; the datasheet lists pins 2, 3, 5 and 6 as the soldering points for the thermal resistance specification.
3 K3; A4 passive Cathode of diode 3 and anode of diode 4 share this pin as printed in the pinning table.
4 A3 passive Anode of diode 3; this pin is a diode terminal of the device.
5 K4 passive Cathode of diode 4; the datasheet lists this pin as one of the soldering points for the thermal resistance specification.
6 K1; A2 passive Cathode of diode 1 and anode of diode 2 share this pin as printed in the pinning table.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-363
Category Diodes
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
reverse voltage VR 100 V 2
repetitive peak reverse voltage VRRM 100 V 2
forward current IF 200 mA single diode loaded 2
repetitive peak forward current IFRM 500 mA 2
non-repetitive peak forward current IFSM 4 A tp = 1 µs; square wave; Tj(init) = 25 °C 2
non-repetitive peak forward current IFSM 1 A tp = 1 ms; square wave; Tj(init) = 25 °C 2
non-repetitive peak forward current IFSM 0.5 A tp = 1 s; square wave; Tj(init) = 25 °C 2
total power dissipation Ptot 250 mW Tsp ≤ 85 °C 2
junction temperature Tj 150 °C 2
ambient temperature Tamb -65 150 °C 2
storage temperature Tstg -65 150 °C 2
thermal resistance from junction to solder point Rth(j-sp) 260 K/W soldering points at pins 2, 3, 5 and 6 2
forward voltage VF 715 mV IF = 1 mA; Tamb = 25 °C 3
forward voltage VF 855 mV IF = 10 mA; Tamb = 25 °C 3
forward voltage VF 1 V IF = 50 mA; Tamb = 25 °C 3
forward voltage VF 1.25 V IF = 150 mA; Tamb = 25 °C 3
reverse current IR 30 nA VR = 25 V; Tamb = 25 °C 3
reverse current IR 0.5 µA VR = 80 V; Tamb = 25 °C 3
reverse current IR 30 µA VR = 25 V; Tj = 150 °C 3
reverse current IR 50 µA VR = 80 V; Tj = 150 °C 3
diode capacitance Cd 1.5 pF VR = 0 V; f = 1 MHz; Tamb = 25 °C 3
reverse recovery time trr 4 ns IF = 10 mA; IR = 10 mA; IR(meas) = 1 mA; RL = 100 Ω; Tamb = 25 °C 3
peak forward recovery voltage VFRM 1.75 V IF = 10 mA; tr = 20 ns; Tamb = 25 °C 3

CAD (KiCad official)

  • Symbol: BAV99S
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: bav99s-etched.step / bav99s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bav99s.step / bav99s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (8 pp, sha256 357b06311cbcfe4b, retrieved 2026-10-18, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF