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Contents

README

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BAV99RWT1G

onsemi · Switching Diodes · SOT-323

BAV99RWT1G from onsemi, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 CATHODE passive Cathode of the first diode of the dual series pair; each diode is rated for 100 Vdc reverse voltage and 215 mAdc forward current.
2 ANODE passive Anode of the second diode of the dual series pair; each diode is rated for 100 Vdc reverse voltage and 215 mAdc forward current.
3 ANODE-CATHODE passive Common node joining the anode of one diode to the cathode of the other in the Style 10 dual series configuration; each diode is rated for 100 Vdc reverse voltage and 215 mAdc forward current.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-323
Category Diodes
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Reverse Voltage VR 100 Vdc 1
Forward Current IF 215 mAdc 1
Peak Forward Surge Current IFM(surge) 500 mAdc 1
Repetitive Peak Reverse Voltage VRRM 100 V 1
Average Rectified Forward Current IF(AV) 715 mA Note 1, averaged over any 20 ms period 1
Repetitive Peak Forward Current IFRM 450 mA 1
Non-Repetitive Peak Forward Current IFSM 2 A t = 1.0 s (printed; likely 1.0 µs) 1
Non-Repetitive Peak Forward Current IFSM 1 A t = 1.0 ms 1
Non-Repetitive Peak Forward Current IFSM 0.5 A t = 1.0 s 1
Reverse Breakdown Voltage V(BR) 100 Vdc I(BR) = 100 A (printed; likely 100 µA) 2
Reverse Voltage Leakage Current IR 1 Adc VR = 100 Vdc 2
Reverse Voltage Leakage Current IR 30 Adc VR = 25 Vdc, TJ = 150°C 2
Reverse Voltage Leakage Current IR 50 Adc VR = 70 Vdc, TJ = 150°C 2
Diode Capacitance CD 1.5 pF VR = 0, f = 1.0 MHz 2
Forward Voltage VF 715 mVdc IF = 1.0 mAdc 2
Forward Voltage VF 855 mVdc IF = 10 mAdc 2
Forward Voltage VF 1000 mVdc IF = 50 mAdc 2
Forward Voltage VF 1250 mVdc IF = 150 mAdc 2
Reverse Recovery Time trr 6 ns IF = IR = 10 mAdc, iR(REC) = 1.0 mAdc, RL = 100 (Figure 1) 2
Forward Recovery Voltage VFR 1.75 V IF = 10 mA, tr = 20 ns 2
Total Device Dissipation (FR-5 Board) PD 200 mW TA = 25°C, FR-5 board (Note 1) 2
Derate above 25°C (FR-5 Board) 1.6 mW/°C FR-5 board, above TA = 25°C 2
Thermal Resistance Junction-to-Ambient (FR-5 Board) RθJA 625 °C/W FR-5 board 2
Total Device Dissipation (Alumina Substrate) PD 300 mW TA = 25°C, alumina substrate (Note 2) 2
Derate above 25°C (Alumina Substrate) 2.4 mW/°C alumina substrate, above TA = 25°C 2
Thermal Resistance Junction-to-Ambient (Alumina Substrate) RθJA 417 °C/W alumina substrate 2
Junction and Storage Temperature TJ, Tstg -65 150 °C 2

CAD (KiCad official)

  • Symbol: BAV99RWT1G
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: bav99rwt1g-etched.step / bav99rwt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bav99rwt1g.step / bav99rwt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (4 pp, sha256 3b8f1d0c907badc0, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF