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BAV99LT3G

Public Made by Adom

by adom

onsemi Switching Diodes, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BAV99LT3G

onsemi · Switching Diodes · SOT-23

BAV99LT3G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 ANODE passive Anode of the first diode in the dual series pair; each diode is rated for 100 V reverse voltage and 215 mA forward current (Maximum Ratings, page 1).
2 CATHODE passive Cathode of the second diode in the dual series pair; each diode is rated for 100 V reverse voltage and 215 mA forward current (Maximum Ratings, page 1).
3 CATHODE-ANODE passive Common junction connecting the cathode of one diode to the anode of the other in the series pair; per-diode limits are 100 V reverse and 215 mA forward (Maximum Ratings, page 1).

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Diodes
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Reverse Voltage VR 100 Vdc 1
Forward Current IF 215 mAdc 1
Peak Forward Surge Current IFM(surge) 500 mAdc 1
Repetitive Peak Reverse Voltage VRRM 100 V 1
Average Rectified Forward Current IF(AV) 715 mA averaged over any 20 ms period (Note 1) 1
Repetitive Peak Forward Current IFRM 450 mA 1
Non-Repetitive Peak Forward Current IFSM 2 A t = 1.0 s 1
Non-Repetitive Peak Forward Current IFSM 1 A t = 1.0 ms 1
Non-Repetitive Peak Forward Current IFSM 0.5 A t = 1.0 s 1
Total Device Dissipation, FR-5 Board PD 225 mW FR-5 Board (Note 1), TA = 25°C 1
Derate above 25°C, FR-5 Board 1.8 mW/°C FR-5 Board (Note 1), derate above 25°C 1
Thermal Resistance, Junction-to-Ambient, FR-5 Board RJA 556 °C/W FR-5 Board (Note 1) 1
Total Device Dissipation, Alumina Substrate PD 300 mW Alumina Substrate (Note 2), TA = 25°C 1
Derate above 25°C, Alumina Substrate 2.4 mW/°C Alumina Substrate (Note 2), derate above 25°C 1
Thermal Resistance, Junction-to-Ambient, Alumina Substrate RJA 417 °C/W Alumina Substrate (Note 2) 1
Junction and Storage Temperature Range TJ, Tstg -65 150 °C 1
Reverse Breakdown Voltage V(BR) 100 Vdc I(BR) = 100 A 2
Reverse Voltage Leakage Current IR 1 Adc VR = 100 Vdc 2
Reverse Voltage Leakage Current IR 30 Adc VR = 25 Vdc, TJ = 150°C 2
Reverse Voltage Leakage Current IR 50 Adc VR = 70 Vdc, TJ = 150°C 2
Diode Capacitance CD 1.5 pF VR = 0, f = 1.0 MHz 2
Forward Voltage VF 715 mVdc IF = 1.0 mAdc 2
Forward Voltage VF 855 mVdc IF = 10 mAdc 2
Forward Voltage VF 1000 mVdc IF = 50 mAdc 2
Forward Voltage VF 1250 mVdc IF = 150 mAdc 2
Reverse Recovery Time trr 6 ns IF = IR = 10 mAdc, iR(REC) = 1.0 mAdc, RL = 100 2
Forward Recovery Voltage VFR 1.75 V IF = 10 mA, tr = 20 ns 2

CAD (KiCad official)

  • Symbol: BAV99LT3G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bav99lt3g-etched.step / bav99lt3g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bav99lt3g.step / bav99lt3g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (3 pp, sha256 14ce7ef8a9fede5d, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF