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BAV756S

Public Made by Adom

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Nexperia Switching Diodes, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BAV756S

Nexperia · Switching Diodes · SOT-363

BAV756S from Nexperia, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A1 passive Anode of diode 1; the per-diode limits in Table 5 apply (VR 90 V, IF 250 mA at Ts = 60 °C).
2 K2 passive Cathode of diode 2; the per-diode limits in Table 5 apply (VR 90 V, IF 250 mA at Ts = 60 °C).
3 A2; A3 passive Common anode shared by diode 2 and diode 3; the per-diode limits in Table 5 apply (VR 90 V, IF 250 mA at Ts = 60 °C).
4 K3 passive Cathode of diode 3; the per-diode limits in Table 5 apply (VR 90 V, IF 250 mA at Ts = 60 °C).
5 A4 passive Anode of diode 4; the per-diode limits in Table 5 apply (VR 90 V, IF 250 mA at Ts = 60 °C).
6 K1; K4 passive Common cathode shared by diode 1 and diode 4; the per-diode limits in Table 5 apply (VR 90 V, IF 250 mA at Ts = 60 °C).

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-363
Category Diodes
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Repetitive peak reverse voltage VRRM 90 V 2
Reverse voltage VR 90 V 2
Forward current (per diode) IF 250 mA Ts = 60 °C 2
Non-repetitive peak forward current IFSM 4 A tp = 1 µs; square wave; Tj(init) = 25 °C 2
Non-repetitive peak forward current IFSM 1 A tp = 1 ms; square wave; Tj(init) = 25 °C 2
Non-repetitive peak forward current IFSM 0.5 A tp = 1 s; square wave; Tj(init) = 25 °C 2
Repetitive peak forward current IFRM 500 mA 2
Total power dissipation Ptot 350 mW Ts = 60 °C [1] 2
Forward current (per device) IF 100 mA Ts = 60 °C 2
Junction temperature Tj 150 °C 2
Ambient temperature Tamb -65 150 °C 2
Storage temperature Tstg -65 150 °C 2
Thermal resistance from junction to solder point (per diode) Rth(j-sp) 255 K/W 2
Forward voltage VF 715 mV IF = 1 mA; tp ≤ 300 µs; δ ≤ 0.02; pulsed; Tamb = 25 °C 3
Forward voltage VF 855 mV IF = 10 mA; tp ≤ 300 µs; δ ≤ 0.02; pulsed; Tamb = 25 °C 3
Forward voltage VF 1 V IF = 50 mA; tp ≤ 300 µs; δ ≤ 0.02; pulsed; Tamb = 25 °C 3
Forward voltage VF 1.25 V IF = 150 mA; tp ≤ 300 µs; δ ≤ 0.02; pulsed; Tamb = 25 °C 3
Reverse current IR 30 nA VR = 25 V; Tamb = 25 °C 3
Reverse current IR 0.5 µA VR = 80 V; Tamb = 25 °C 3
Reverse current IR 30 µA VR = 25 V; Tj = 150 °C 3
Reverse current IR 150 µA VR = 80 V; Tj = 150 °C 3
Diode capacitance Cd 2 pF VR = 0 V; f = 1 MHz; Tamb = 25 °C 3
Reverse recovery time trr 4 ns IF = 10 mA; IR = 10 mA; RL = 100 Ω; IR(meas) = 1 mA; Tamb = 25 °C 3
Peak forward recovery voltage VFRM 1.75 V IF = 10 mA; tr = 20 ns; Tamb = 25 °C 3

CAD (KiCad official)

  • Symbol: BAV756S
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: bav756s-etched.step / bav756s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bav756s.step / bav756s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (9 pp, sha256 9af4ee8d0712a350, retrieved 2026-10-18, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF