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Contents

README

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BAV23S

Nexperia · Switching Diodes · SOT-23

BAV23S from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A1 passive Anode of diode 1; the datasheet gives no pin-specific limits, and the per-diode limits are VR 200 V and IF 225 mA with a single diode loaded (Table 5).
2 K2 passive Cathode of diode 2; the datasheet gives no pin-specific limits, and the per-diode limits are VR 200 V and IF 225 mA with a single diode loaded (Table 5).
3 K1, A2 passive Common pin: cathode of diode 1 and anode of diode 2 (the two diodes share this terminal); the datasheet gives no pin-specific limits, and the per-diode limits are VR 200 V and IF 225 mA with a single diode loaded (Table 5).

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-23
Category Diodes
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Reverse voltage VR 200 V 2
Repetitive peak reverse voltage VRRM 250 V 2
Forward current IF 225 mA Single diode loaded 2
Forward current IF 125 mA Double diode loaded 2
Repetitive peak forward current IFRM 625 mA 2
Non-repetitive peak forward current IFSM 9 A tp = 1 µs; square wave; Tj = 25 °C prior to surge 2
Non-repetitive peak forward current IFSM 3 A tp = 100 µs; square wave; Tj = 25 °C prior to surge 2
Non-repetitive peak forward current IFSM 1.7 A tp = 10 ms; square wave; Tj = 25 °C prior to surge 2
Total power dissipation Ptot 250 mW Tamb ≤ 25 °C; device mounted on FR4 PCB 2
Junction temperature Tj 150 °C 2
Ambient temperature Tamb -65 150 °C 2
Storage temperature Tstg -65 150 °C 2
Thermal resistance from junction to ambient Rth(j-a) 500 K/W in free air; device mounted on FR4 PCB, single-sided copper, tin-plated and standard footprint 3
Thermal resistance from junction to solder point Rth(j-sp) 360 K/W 3
Forward voltage VF 1 V IF = 100 mA 3
Forward voltage VF 1.25 V IF = 200 mA 3
Reverse current IR 100 nA VR = 200 V 3
Reverse current IR 100 µA VR = 200 V; Tj = 150 °C 3
Diode capacitance Cd 2 pF VR = 0 V; f = 1 MHz 3
Reverse recovery time trr 50 ns IF = 10 mA; IR = 10 mA; IR(meas) = 1 mA; RL = 100 Ω; Tamb = 25 °C 3

CAD (KiCad official)

  • Symbol: BAV23S
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bav23s-etched.step / bav23s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bav23s.step / bav23s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (9 pp, sha256 9614877dbfa55ba2, retrieved 2026-10-17, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF