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BAV23CLT1G

Public Made by Adom

by adom

onsemi Switching Diodes, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BAV23CLT1G

onsemi · Switching Diodes · SOT-23

BAV23CLT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 ANODE passive Anode of one of the two diodes in the dual common-cathode switching diode; the datasheet gives no pin-specific limit, and the device maximum continuous reverse voltage is 250 V with peak forward current 400 mA.
2 ANODE passive Anode of the second diode in the dual common-cathode switching diode; the datasheet gives no pin-specific limit, and the device maximum continuous reverse voltage is 250 V with peak forward current 400 mA.
3 CATHODE passive Common cathode shared by both diodes; the datasheet gives no pin-specific limit, and the device maximum continuous reverse voltage is 250 V with peak forward current 400 mA.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Diodes
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Reverse Voltage Leakage Current IR 0.1 Adc VR = 200 Vdc 2
Reverse Voltage Leakage Current IR 100 Adc VR = 200 Vdc, TJ = 150°C 2
Reverse Breakdown Voltage V(BR) 250 Vdc IBR = 100 Adc 2
Forward Voltage VF 1000 mV IF = 100 mAdc 2
Forward Voltage VF 1250 mV IF = 200 mAdc 2
Diode Capacitance CT 5 pF VR = 0, f = 1.0 MHz 2
Reverse Recovery Time trr 150 ns IF = IR = 30 mAdc, RL = 100 2
Continuous Reverse Voltage VR 250 V 1
Repetitive Peak Reverse Voltage VRRM 250 V 1
Peak Forward Current IF 400 mA 1
Non-Repetitive Peak Forward Surge Current IFSM 9 A t = 1.0 s 1
Non-Repetitive Peak Forward Surge Current IFSM 3 A t = 100 s (as printed) 1
Non-Repetitive Peak Forward Surge Current IFSM 1.7 A t = 10 ms 1
Peak Forward Surge Current IFM(surge) 625 mAdc 1
ESD Rating Per Human Body Model HBM 4 kV 1
ESD Rating Per Machine Model MM 400 V 1
Total Device Dissipation, single heated, footprint Note 1 PD 265 mW TA = 25°C; single heated; Note 1 2
Derate above 25°C, single heated, Note 1 2.1 mW/°C single heated; Note 1 2
Thermal Resistance, Junction-to-Ambient, single heated, Note 1 RJA 472 °C/W single heated; Note 1 2
Thermal Reference, Junction-to-Anode Lead, single heated, Note 1 R_ψJL 263 °C/W single heated; Note 1 2
Thermal Reference, Junction-to-Case, single heated, Note 1 R_ψJC 289 °C/W single heated; Note 1 2
Total Device Dissipation, single heated, footprint Note 2 PD 345 mW TA = 25°C; single heated; Note 2 2
Derate above 25°C, single heated, Note 2 2.7 mW/°C single heated; Note 2 2
Thermal Resistance, Junction-to-Ambient, single heated, Note 2 RJA 362 °C/W single heated; Note 2 2
Thermal Reference, Junction-to-Anode Lead, single heated, Note 2 R_ψJL 251 °C/W single heated; Note 2 2
Thermal Reference, Junction-to-Case, single heated, Note 2 R_ψJC 250 °C/W single heated; Note 2 2
Total Device Dissipation, dual heated, footprint Note 1 PD 390 mW TA = 25°C; dual heated; Note 1 2
Derate above 25°C, dual heated, Note 1 3.1 mW/°C dual heated; Note 1 2
Thermal Resistance, Junction-to-Ambient, dual heated, Note 1 RJA 321 °C/W dual heated; Note 1 2
Thermal Reference, Junction-to-Anode Lead, dual heated, Note 1 R_ψJL 159 °C/W dual heated; Note 1 2
Thermal Reference, Junction-to-Case, dual heated, Note 1 R_ψJC 138 °C/W dual heated; Note 1 2
Total Device Dissipation, dual heated, footprint Note 2 PD 540 mW TA = 25°C; dual heated; Note 2 2
Derate above 25°C, dual heated, Note 2 4.3 mW/°C dual heated; Note 2 2
Thermal Resistance, Junction-to-Ambient, dual heated, Note 2 RJA 231 °C/W dual heated; Note 2 2
Thermal Reference, Junction-to-Anode Lead, dual heated, Note 2 R_ψJL 148 °C/W dual heated; Note 2 2
Thermal Reference, Junction-to-Case, dual heated, Note 2 R_ψJC 119 °C/W dual heated; Note 2 2
Junction and Storage Temperature Range TJ, Tstg -55 150 °C 2

CAD (KiCad official)

  • Symbol: BAV23CLT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bav23clt1g-etched.step / bav23clt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bav23clt1g.step / bav23clt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (5 pp, sha256 be4f68fc42323189, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF