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BAT5402LRHE6327XTSA1

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Infineon Technologies Schottky Diodes, SOD-882. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BAT5402LRHE6327XTSA1

Infineon Technologies · Schottky Diodes · SOD-882

BAT5402LRHE6327XTSA1 from Infineon Technologies, in a SOD-882. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 K passive Cathode of the single Schottky diode (end carrying the cathode marking); reverse voltage VR max 30 V, forward current IF max 200 mA.
2 A passive Anode of the single Schottky diode; forward voltage max 400 mV at IF = 10 mA, 800 mV at IF = 100 mA.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOD-882
Category Diodes
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Diode reverse voltage VR 30 V 2
Forward current IF 200 mA 2
Non-repetitive peak surge forward current IFSM 600 t ≤ 10 ms 2
Repetitive peak forward current IFRM 300 mA tp ≤ 1 s, δ = 0.5 2
Total power dissipation Ptot 230 mW BAT54-02LRH, TS ≤ 135 °C 2
Junction temperature Tj 150 °C 2
Storage temperature Tstg -65 150 °C 2
Junction - soldering point RthJS 65 BAT54-02LRH 3
Breakdown voltage V(BR) 30 V I(BR) = 10 µA; pulsed test tp = 300 µs, D = 0.01 3
Reverse current IR 2 µA VR = 25 V; pulsed test tp = 300 µs, D = 0.01 3
Forward voltage VF 240 mV IF = 0.1 mA; pulsed test tp = 300 µs, D = 0.01 3
Forward voltage VF 320 mV IF = 1 mA; pulsed test tp = 300 µs, D = 0.01 3
Forward voltage VF 400 mV IF = 10 mA; pulsed test tp = 300 µs, D = 0.01 3
Forward voltage VF 500 mV IF = 30 mA; pulsed test tp = 300 µs, D = 0.01 3
Forward voltage VF 800 mV IF = 100 mA; pulsed test tp = 300 µs, D = 0.01 3
Diode capacitance CT 10 pF VR = 1 V, f = 1 MHz 4
Reverse recovery time trr 5 ns IF = 10 mA, IR = 10 mA, measured at IR = 1 mA, RL = 100 Ω 4

CAD (KiCad official)

  • Symbol: BAT5402LRHE6327XTSA1
  • Footprint: Diode_SMD:D_SOD-882
  • 3D model: SOD-882 (KiCad packages3D, STEP)
  • 3D model files: bat5402lrhe6327xtsa1-etched.step / bat5402lrhe6327xtsa1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bat5402lrhe6327xtsa1.step / bat5402lrhe6327xtsa1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (15 pp, sha256 cef1202c5f6d00f9, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF