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BAT46GWJ

Public Made by Adom

by adom

Nexperia Schottky Barrier Diodes (SBD), SOD-123. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BAT46GWJ

Nexperia · Schottky Barrier Diodes (SBD) · SOD-123

BAT46GWJ from Nexperia, in a SOD-123. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 K passive Cathode of the Schottky diode, identified by the marking bar on the package as stated in the pinning table note.
2 A passive Anode of the Schottky diode; the datasheet gives no pin-specific electrical limits for this pin beyond the device limiting values.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOD-123
Category Diodes
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Reverse voltage VR 100 V Tj = 25 °C 3
Forward current IF 250 mA 3
Non-repetitive peak forward current IFSM 2.5 A tp < 10 ms; Tj(init) = 25 °C; square wave 3
Total power dissipation Ptot 390 mW Tamb ≤ 25 °C 3
Total power dissipation Ptot 660 mW 3
Junction temperature Tj 150 °C 3
Ambient temperature Tamb -55 150 °C 3
Storage temperature Tstg -65 150 °C 3
Thermal resistance from junction to ambient Rth(j-a) 320 K/W in free air 3
Thermal resistance from junction to ambient Rth(j-a) 190 K/W 3
Thermal resistance from junction to solder point Rth(j-sp) 35 K/W 3
Reverse breakdown voltage V(BR)R 100 V IR = 1 mA; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C 5
Forward voltage VF 175 200 mV IF = 0.1 mA; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C 5
Forward voltage VF 315 350 mV IF = 10 mA; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C 5
Forward voltage VF 470 mV IF = 10 mA; tp ≤ 300 µs; δ ≤ 0.02; Tj = -40 °C 5
Forward voltage VF 415 475 mV IF = 50 mA; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C 5
Forward voltage VF 560 mV IF = 50 mA; tp ≤ 300 µs; δ ≤ 0.02; Tj = -40 °C 5
Forward voltage VF 710 850 mV IF = 250 mA; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C 5
Reverse current IR 0.2 0.5 µA VR = 1.5 V; Tj = 25 °C 5
Reverse current IR 12 µA VR = 1.5 V; pulsed; Tj = 60 °C 5
Reverse current IR 0.3 0.8 µA VR = 10 V; pulsed; Tj = 25 °C 5
Reverse current IR 20 µA VR = 10 V; pulsed; Tj = 60 °C 5
Reverse current IR 0.7 2 µA VR = 50 V; pulsed; Tj = 25 °C 5
Reverse current IR 44 µA VR = 50 V; pulsed; Tj = 60 °C 5
Reverse current IR 1 4 µA VR = 75 V; pulsed; Tj = 25 °C 5
Reverse current IR 80 µA VR = 75 V; pulsed; Tj = 60 °C 5
Reverse current IR 2 9 µA VR = 100 V; pulsed; Tj = 25 °C 5
Reverse current IR 120 µA VR = 100 V; pulsed; Tj = 60 °C 5
Reverse current IR 600 µA VR = 100 V; pulsed; Tj = 85 °C 5
Diode capacitance Cd 39 pF VR = 0 V; f = 1 MHz; Tj = 25 °C 5
Diode capacitance Cd 21 pF VR = 1 V; f = 1 MHz; Tj = 25 °C 5

CAD (KiCad official)

  • Symbol: BAT46GWJ
  • Footprint: Diode_SMD:D_SOD-123F
  • 3D model: SOD-123 (KiCad packages3D, STEP)
  • 3D model files: bat46gwj-etched.step / bat46gwj-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bat46gwj.step / bat46gwj.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (13 pp, sha256 97cf952c86d5b7c5, retrieved 2026-10-28, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF