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BAT42LSYL

Public Made by Adom

by adom

Nexperia Schottky Diodes, SOD-882. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BAT42LSYL

Nexperia · Schottky Diodes · SOD-882

BAT42LSYL from Nexperia, in a SOD-882. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 K passive Cathode, indicated by the marking bar on the package top; the diode is rated for VR ≤ 40 V and IF ≤ 200 mA.
2 A passive Anode of the general-purpose Schottky diode, with VF ≤ 600 mV at IF = 200 mA and Tamb = 25 °C.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOD-882
Category Diodes
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Reverse voltage VR 40 V 2
Forward current IF 200 mA 2
Repetitive peak forward current IFRM 1 A tp ≤ 1 ms; δ ≤ 0.25 2
Non-repetitive peak forward current IFSM 3 A tp = 8 ms; square wave 2
Total power dissipation Ptot 335 mW Tamb ≤ 25 °C [1] 2
Total power dissipation Ptot 610 mW Tamb ≤ 25 °C [2] 2
Junction temperature Tj 150 °C 2
Ambient temperature Tamb -55 150 °C 2
Storage temperature Tstg -65 150 °C 2
Thermal resistance from junction to ambient Rth(j-a) 375 K/W in free air [1] [2] 2
Thermal resistance from junction to ambient Rth(j-a) 205 K/W [3] mounting pad for cathode 1 cm2 2
Forward voltage VF 220 mV IF = 0.1 mA; tp ≤ 300 µs; δ ≤ 0.02; pulsed; Tamb = 25 °C 3
Forward voltage VF 290 mV IF = 1 mA; tp ≤ 300 µs; δ ≤ 0.02; pulsed; Tamb = 25 °C 3
Forward voltage VF 360 mV IF = 10 mA; tp ≤ 300 µs; δ ≤ 0.02; pulsed; Tamb = 25 °C 3
Forward voltage VF 500 mV IF = 100 mA; tp ≤ 300 µs; δ ≤ 0.02; pulsed; Tamb = 25 °C 3
Forward voltage VF 600 mV IF = 100 mA; tp ≤ 300 µs; δ ≤ 0.02; pulsed; Tamb = -40 °C 3
Forward voltage VF 650 mV IF = 200 mA; tp ≤ 300 µs; δ ≤ 0.02; pulsed; Tamb = -40 °C 3
Reverse current IR 0.5 µA VR = 25 V; Tamb = 25 °C 3
Reverse current IR 10 µA VR = 40 V; Tamb = 25 °C 3
Diode capacitance Cd 20 pF VR = 1 V; f = 1 MHz; Tamb = 25 °C 3

CAD (KiCad official)

  • Symbol: BAT42LSYL
  • Footprint: Diode_SMD:D_SOD-882
  • 3D model: SOD-882 (KiCad packages3D, STEP)
  • 3D model files: bat42lsyl-etched.step / bat42lsyl-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bat42lsyl.step / bat42lsyl.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (8 pp, sha256 ce660c3d37a1043b, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF