Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

BAT 64-06W H6327

Infineon Technologies · Schottky Diodes · SOT-323-3

BAT 64-06W H6327 from Infineon Technologies, in a SOT-323-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 K1 passive Cathode of diode D1 in the common-anode pair (BAT64-06W); diode reverse voltage VR max 40 V, forward current IF max 250 mA.
2 K2 passive Cathode of diode D2 in the common-anode pair (BAT64-06W); diode reverse voltage VR max 40 V, forward current IF max 250 mA.
3 A passive Common anode of diodes D1 and D2 (BAT64-06W, SOT323); total power dissipation Ptot 250 mW at TS ≤ 111°C.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOT-323-3
Category Diodes
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Breakdown voltage V(BR) 40 V I(BR) = 10 µA 3
Reverse current IR 2 µA VR = 30 V 3
Reverse current IR 200 µA VR = 30 V, TA = 85 °C 3
Forward voltage VF 270 320 350 mV IF = 1 mA 3
Forward voltage VF 310 385 430 mV IF = 10 mA 3
Forward voltage VF 370 440 520 mV IF = 30 mA 3
Forward voltage VF 500 570 750 mV IF = 100 mA 3
Reverse recovery time trr 5 ns IF = 10 mA, IR = 10 mA, measured at IR = 1 mA, RL = 100 Ω 3
Diode reverse voltage VR 40 V 2
Forward current IF 250 mA 2
Non-repetitive peak surge forward current IFSM 800 t ≤ 10 ms 2
Average forward current IFAV 120 50/60 Hz, sinus 2
Total power dissipation Ptot 250 mW BAT64-06W, TS ≤ 111 °C 2
Junction temperature Tj 150 °C 2
Storage temperature Tstg -55 150 °C 2
Thermal resistance junction - soldering point RthJS 155 K/W BAT64-04W, BAT64-06W 2
Diode capacitance CT 4 6 pF VR = 1 V, f = 1 MHz 3

CAD (KiCad official)

  • Symbol: BAT 64-06W H6327
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323-3 (KiCad packages3D, STEP)
  • 3D model files: bat-64-06w-h6327-etched.step / bat-64-06w-h6327-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bat-64-06w-h6327.step / bat-64-06w-h6327.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (7 pp, sha256 0eb95c2df9699b80, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF