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BAS70L-QYL
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Nexperia Schottky Diodes, DFN1006-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BAS70L-QYL
Nexperia · Schottky Diodes · DFN1006-2
BAS70L-QYL from Nexperia, in a DFN1006-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode of the Schottky diode, identified by the marking bar on the package, which indicates the cathode; the device is rated for a reverse voltage VR of 70 V. |
| 2 | A | passive | Anode of the Schottky diode; the datasheet rates the device for a forward current IF of 70 mA and a repetitive peak forward current IFRM of 70 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | DFN1006-2 |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| reverse voltage | VR | 70 | V | Tj = 25 °C | 2 | ||
| forward current | IF | 70 | mA | 2 | |||
| repetitive peak forward current | IFRM | 70 | mA | tp ≤ 1 s; δ ≤ 0.5 | 2 | ||
| non-repetitive peak forward current | IFSM | 100 | mA | tp ≤ 10 ms; Tj(init) = 25 °C | 2 | ||
| junction temperature | Tj | 150 | °C | 2 | |||
| ambient temperature | Tamb | -65 | 150 | °C | 2 | ||
| storage temperature | Tstg | -65 | 150 | °C | 2 | ||
| forward voltage | VF | 410 | mV | IF = 1 mA; tp ≤ 300 µs; δ ≤ 0.02; pulsed; Tamb = 25 °C | 3 | ||
| forward voltage | VF | 750 | mV | IF = 10 mA; tp ≤ 300 µs; δ ≤ 0.02; pulsed; Tamb = 25 °C | 3 | ||
| forward voltage | VF | 1 | V | IF = 15 mA; tp ≤ 300 µs; δ ≤ 0.02; pulsed; Tamb = 25 °C | 3 | ||
| reverse current | IR | 100 | nA | VR = 50 V; Tamb = 25 °C | 3 | ||
| reverse current | IR | 10 | µA | VR = 70 V; Tamb = 25 °C | 3 | ||
| diode capacitance | Cd | 2 | pF | VR = 0 V; f = 1 MHz; Tamb = 25 °C | 3 | ||
| thermal resistance from junction to ambient | Rth(j-a) | 500 | K/W | in free air | 2 |
CAD (KiCad official)
- Symbol:
BAS70L-QYL - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2 (KiCad packages3D, STEP)
- 3D model files:
bas70l-qyl-etched.step/bas70l-qyl-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bas70l-qyl.step/bas70l-qyl.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (8 pp, sha256
c77c8c9328385be0, retrieved 2026-10-26, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusoff(skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BAS70L-QYL
**Nexperia** · Schottky Diodes · DFN1006-2
BAS70L-QYL from Nexperia, in a DFN1006-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode of the Schottky diode, identified by the marking bar on the package, which indicates the cathode; the device is rated for a reverse voltage VR of 70 V. |
| 2 | A | passive | Anode of the Schottky diode; the datasheet rates the device for a forward current IF of 70 mA and a repetitive peak forward current IFRM of 70 mA. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | DFN1006-2 |
| Category | Diodes |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| reverse voltage | VR | | | 70 | V | Tj = 25 °C | 2 |
| forward current | IF | | | 70 | mA | | 2 |
| repetitive peak forward current | IFRM | | | 70 | mA | tp ≤ 1 s; δ ≤ 0.5 | 2 |
| non-repetitive peak forward current | IFSM | | | 100 | mA | tp ≤ 10 ms; Tj(init) = 25 °C | 2 |
| junction temperature | Tj | | | 150 | °C | | 2 |
| ambient temperature | Tamb | -65 | | 150 | °C | | 2 |
| storage temperature | Tstg | -65 | | 150 | °C | | 2 |
| forward voltage | VF | | | 410 | mV | IF = 1 mA; tp ≤ 300 µs; δ ≤ 0.02; pulsed; Tamb = 25 °C | 3 |
| forward voltage | VF | | | 750 | mV | IF = 10 mA; tp ≤ 300 µs; δ ≤ 0.02; pulsed; Tamb = 25 °C | 3 |
| forward voltage | VF | | | 1 | V | IF = 15 mA; tp ≤ 300 µs; δ ≤ 0.02; pulsed; Tamb = 25 °C | 3 |
| reverse current | IR | | | 100 | nA | VR = 50 V; Tamb = 25 °C | 3 |
| reverse current | IR | | | 10 | µA | VR = 70 V; Tamb = 25 °C | 3 |
| diode capacitance | Cd | | | 2 | pF | VR = 0 V; f = 1 MHz; Tamb = 25 °C | 3 |
| thermal resistance from junction to ambient | Rth(j-a) | | | 500 | K/W | in free air | 2 |
## CAD (KiCad official)
- Symbol: `BAS70L-QYL`
- Footprint: `Diode_SMD:D_SOD-882`
- 3D model: DFN1006-2 (KiCad packages3D, STEP)
- 3D model files: `bas70l-qyl-etched.step` / `bas70l-qyl-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bas70l-qyl.step` / `bas70l-qyl.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Nexperia datasheet](https://assets.nexperia.com/documents/data-sheet/BAS70L-QYL.pdf) (8 pp, sha256 `c77c8c9328385be0`, retrieved 2026-10-26, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `off` (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bas70l-qyl-datasheet.pdf)