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BAS40E6327
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Infineon Technologies Schottky Diodes, SOT-23. Pinout reviewed by a person against the datasheet, KiCad symbol/footprint/3D.
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BAS40E6327
Infineon Technologies · Schottky Diodes · SOT-23
BAS40E6327 from Infineon Technologies, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A | passive | Diode terminal on the pin 1 side of the single Schottky diode (shown as anode in the internal diagram); VR max 40 V, IF max 120 mA. |
| 2 | NC | unconnected | Pin 2 is drawn in the BAS40 single-diode diagram with no connection to the diode. |
| 3 | C | passive | Diode terminal on the pin 3 side of the single Schottky diode (shown as cathode in the internal diagram); VR max 40 V, IF max 120 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-23 |
| Category | Diodes |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Diode reverse voltage | VR | 40 | V | 2 | |||
| Forward current | IF | 120 | mA | 2 | |||
| Non-repetitive peak surge forward current | IFSM | 200 | t ≤ 10 ms | 2 | |||
| Total power dissipation | Ptot | 250 | mW | BAS40 variant, TS ≤ 81 °C | 2 | ||
| Junction temperature | Tj | 150 | °C | 2 | |||
| Operating temperature range | Top | -55 | 150 | °C | 2 | ||
| Storage temperature | Tstg | -55 | 150 | °C | 2 | ||
| Junction - soldering point thermal resistance | RthJS | 275 | K/W | BAS40, BAS40-07 variant | 2 | ||
| Breakdown voltage | V(BR) | 40 | V | I(BR) = 10 µA | 3 | ||
| Reverse current | IR | 1 | µA | VR = 30 V | 3 | ||
| Forward voltage | VF | 250 | 350 | 600 | mV | IF = 1 mA | 3 |
| Forward voltage | VF | 310 | 450 | 720 | mV | IF = 10 mA | 3 |
| Forward voltage | VF | 380 | 500 | 1000 | mV | IF = 40 mA | 3 |
| Forward voltage matching | ∆ VF | 20 | mV | IF = 10 mA | 3 | ||
| Diode capacitance | CT | 3 | 5 | pF | VR = 0, f = 1 MHz | 3 | |
| Charge carrier life time | τrr | 100 | ps | IF = 25 mA | 3 |
CAD (KiCad official)
- Symbol:
BAS40E6327 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
bas40e6327-etched.step/bas40e6327-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bas40e6327.step/bas40e6327.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (15 pp, sha256
8cde61e18bbdc846, retrieved 2026-10-21, tier: lcsc) - Extractor:
ds2sf(Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BAS40E6327
**Infineon Technologies** · Schottky Diodes · SOT-23
BAS40E6327 from Infineon Technologies, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A | passive | Diode terminal on the pin 1 side of the single Schottky diode (shown as anode in the internal diagram); VR max 40 V, IF max 120 mA. |
| 2 | NC | unconnected | Pin 2 is drawn in the BAS40 single-diode diagram with no connection to the diode. |
| 3 | C | passive | Diode terminal on the pin 3 side of the single Schottky diode (shown as cathode in the internal diagram); VR max 40 V, IF max 120 mA. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-23 |
| Category | Diodes |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Diode reverse voltage | VR | | | 40 | V | | 2 |
| Forward current | IF | | | 120 | mA | | 2 |
| Non-repetitive peak surge forward current | IFSM | | | 200 | | t ≤ 10 ms | 2 |
| Total power dissipation | Ptot | | | 250 | mW | BAS40 variant, TS ≤ 81 °C | 2 |
| Junction temperature | Tj | | | 150 | °C | | 2 |
| Operating temperature range | Top | -55 | | 150 | °C | | 2 |
| Storage temperature | Tstg | -55 | | 150 | °C | | 2 |
| Junction - soldering point thermal resistance | RthJS | | | 275 | K/W | BAS40, BAS40-07 variant | 2 |
| Breakdown voltage | V(BR) | 40 | | | V | I(BR) = 10 µA | 3 |
| Reverse current | IR | | | 1 | µA | VR = 30 V | 3 |
| Forward voltage | VF | 250 | 350 | 600 | mV | IF = 1 mA | 3 |
| Forward voltage | VF | 310 | 450 | 720 | mV | IF = 10 mA | 3 |
| Forward voltage | VF | 380 | 500 | 1000 | mV | IF = 40 mA | 3 |
| Forward voltage matching | ∆ VF | | | 20 | mV | IF = 10 mA | 3 |
| Diode capacitance | CT | | 3 | 5 | pF | VR = 0, f = 1 MHz | 3 |
| Charge carrier life time | τrr | | | 100 | ps | IF = 25 mA | 3 |
## CAD (KiCad official)
- Symbol: `BAS40E6327`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `bas40e6327-etched.step` / `bas40e6327-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bas40e6327.step` / `bas40e6327.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588912616948813824) (15 pp, sha256 `8cde61e18bbdc846`, retrieved 2026-10-21, tier: lcsc)
- **Extractor:** `ds2sf` (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bas40e6327-datasheet.pdf)