component
BAS40DB
Public Made by Adomby adom
PJSEMI Schottky Barrier Diodes (SBD), DFN1006-2L. Unpolarised two-terminal part: the datasheet prints no pin numbers, so pins 1 and 2 follow the library convention, KiCad symbol/footprint/3D.
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BAS40DB
PJSEMI · Schottky Barrier Diodes (SBD) · DFN1006-2L
BAS40DB from PJSEMI, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | PJSEMI |
| Package | DFN1006-2L |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive Peak Reverse Voltage | VRRM | 40 | V | 1 | |||
| Average Rectified Forward Current | IF(AV) | 200 | mA | 1 | |||
| Non-Repetitive Peak Forward Surge Current at 8.3ms | IFSM | 250 | mA | 8.3ms | 1 | ||
| Power Dissipation | PD | 120 | mW | 1 | |||
| Junction Temperature | TJ | 125 | °C | 1 | |||
| Storage Temperature Range | TSTG | -55 | 125 | °C | 1 | ||
| Thermal Resistance Junction to Ambient Air | RθJA | 833 | °C/W | 1 | |||
| Forward Voltage at IF = 1 mA | VF | 0.38 | V | IF = 1 mA | 1 | ||
| Forward Voltage at IF = 40 mA | VF | 1 | V | IF = 40 mA | 1 | ||
| Reverse Current | IR | 0.2 | µA | VR = 30 V | 1 | ||
| Breakdown Voltage | VR(BR) | 40 | V | IR = 10 μA | 1 | ||
| Total Capacitance | CT | 5 | pF | VR = 0 V, f = 1 MHz | 1 | ||
| Reverse Recovery Time | Trr | 5 | ns | IF = IR = 5 mA, Irr = 0.1xIR, RL = 100 Ω | 1 |
CAD (KiCad official)
- Symbol:
BAS40DB - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files:
bas40db-etched.step/bas40db-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bas40db.step/bas40db.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: PJSEMI datasheet (3 pp, sha256
1675c301bd0e8534, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins, primarycathode-band convention(convention), consensusoff(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BAS40DB
**PJSEMI** · Schottky Barrier Diodes (SBD) · DFN1006-2L
BAS40DB from PJSEMI, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | PJSEMI |
| Package | DFN1006-2L |
| Category | Diodes |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive Peak Reverse Voltage | VRRM | | | 40 | V | | 1 |
| Average Rectified Forward Current | IF(AV) | | | 200 | mA | | 1 |
| Non-Repetitive Peak Forward Surge Current at 8.3ms | IFSM | | | 250 | mA | 8.3ms | 1 |
| Power Dissipation | PD | | | 120 | mW | | 1 |
| Junction Temperature | TJ | | | 125 | °C | | 1 |
| Storage Temperature Range | TSTG | -55 | | 125 | °C | | 1 |
| Thermal Resistance Junction to Ambient Air | RθJA | | | 833 | °C/W | | 1 |
| Forward Voltage at IF = 1 mA | VF | | | 0.38 | V | IF = 1 mA | 1 |
| Forward Voltage at IF = 40 mA | VF | | | 1 | V | IF = 40 mA | 1 |
| Reverse Current | IR | | | 0.2 | µA | VR = 30 V | 1 |
| Breakdown Voltage | VR(BR) | 40 | | | V | IR = 10 μA | 1 |
| Total Capacitance | CT | | | 5 | pF | VR = 0 V, f = 1 MHz | 1 |
| Reverse Recovery Time | Trr | | | 5 | ns | IF = IR = 5 mA, Irr = 0.1xIR, RL = 100 Ω | 1 |
## CAD (KiCad official)
- Symbol: `BAS40DB`
- Footprint: `Diode_SMD:D_SOD-882`
- 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files: `bas40db-etched.step` / `bas40db-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bas40db.step` / `bas40db.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [PJSEMI datasheet](docs/bas40db-datasheet.pdf) (3 pp, sha256 `1675c301bd0e8534`, retrieved 2026-10-21, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins`, primary `cathode-band convention` (convention), consensus `off` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bas40db-datasheet.pdf)