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BAS40-TP
Public Made by Adomby adom
MCC(美微科) Schottky Diodes, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBAS40-TP
MCC(美微科) · Schottky Diodes · SOT-23
BAS40-TP from MCC(美微科), in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A | passive | Anode of the single Schottky diode, shown on the bottom-left pin of the BAS40 internal structure drawing (40V max DC blocking voltage, 200mA average forward current). |
| 2 | NC | unconnected | No internal connection on the single-diode BAS40; the bottom-right pin in the internal structure drawing is not connected to the diode. |
| 3 | K | passive | Cathode of the single Schottky diode, shown on the top pin of the BAS40 internal structure drawing (40V min reverse breakdown voltage at IR=10µA). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MCC(美微科) |
| Package | SOT-23 |
| Category | Diodes |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Min Reverse Breakdown Voltage | VBR | 40 | V | IR=10µA | 1 | ||
| DC Reverse Current at Rated DC Blocking Voltage | IR | 10 | 200 | nA | tp < 300μs, VR = 30V | 1 | |
| Maximum Forward Voltage | VF | 380 | mV | IF=1.0mA | 1 | ||
| Maximum Forward Voltage | VF | 1000 | mV | IF=40mA | 1 | ||
| Maximum Reverse Recovery Time | trr | 5 | ns | Irr=0.5mA, IR=IF=5mA, RL=100Ω | 1 | ||
| Peak Forward Surge Current | IFSM | 600 | mA | tp<1s, Ta=25°C | 1 | ||
| Average Forward Current | IF(AV) | 200 | mA | 1 | |||
| Maximum Recurrent Peak Reverse Voltage | 40 | V | 1 | ||||
| Maximum DC Blocking Voltage | 40 | V | 1 | ||||
| Power Dissipation | Pd | 200 | mW | TA= 25 °C | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 125 | °C | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance Junction to Ambient | 500 | °C/W | Junction to Ambient | 1 |
CAD (KiCad official)
- Symbol:
BAS40-TP - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
bas40-tp-etched.step/bas40-tp-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bas40-tp.step/bas40-tp.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MCC(美微科) datasheet (3 pp, sha256
e6712c1db3d73717, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).