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Ray Publish 0.1.0 40c2aca 4d ago

BAS321JX

Nexperia · Switching Diodes · SOD-323

BAS321JX from Nexperia, in a SOD-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 K passive Cathode of the high-voltage switching diode; reverse voltage VR up to 200 V (VRRM 250 V) and forward current IF up to 250 mA.
2 A passive Anode of the high-voltage switching diode; forward voltage VF max 1.25 V at IF = 200 mA, Tj = 25 °C.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOD-323
Category Diodes
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Repetitive peak reverse voltage VRRM 250 V 3
Reverse voltage VR 200 V 3
Forward current IF 250 mA Device mounted on FR4 PCB, standard footprint 3
Non-repetitive peak forward current IFSM 13 A tp = 50 µs; Tj(init) = 25 °C; square wave 3
Non-repetitive peak forward current IFSM 9 A tp = 100 µs; Tj(init) = 25 °C; square wave 3
Non-repetitive peak forward current IFSM 3 A tp = 10 ms; Tj(init) = 25 °C; square wave 3
Repetitive peak forward current IFRM 625 mA tp ≤ 0.5 ms; δ ≤ 0.25 3
Total power dissipation Ptot 420 mW Tamb ≤ 25 °C; FR4 PCB, standard footprint 3
Total power dissipation Ptot 660 mW Tamb ≤ 25 °C; FR4 PCB, mounting pad for cathode 1 cm2 3
Junction temperature Tj 150 °C 3
Ambient temperature Tamb -55 150 °C 3
Storage temperature Tstg -65 150 °C 3
Thermal resistance junction to ambient Rth(j-a) 300 K/W FR4 PCB, standard footprint 3
Thermal resistance junction to ambient Rth(j-a) 190 K/W FR4 PCB, mounting pad for cathode 1 cm2 3
Thermal resistance junction to solder point Rth(j-sp) 40 K/W Soldering point of cathode tab 3
Forward voltage VF 1 V IF = 100 mA; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C 5
Forward voltage VF 1.25 V IF = 200 mA; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C 5
Reverse current IR 100 nA VR = 200 V; pulsed; Tj = 25 °C 5
Reverse current IR 100 µA VR = 200 V; pulsed; Tj = 150 °C 5
Diode capacitance Cd 2 pF VR = 0 V; f = 1 MHz; Tj = 25 °C 5
Reverse recovery time trr 50 ns IF = 30 mA; IR = 30 mA; RL = 100 Ω; IR(meas) = 3 mA; Tj = 25 °C 5

CAD (KiCad official)

  • Symbol: BAS321JX
  • Footprint: Diode_SMD:D_SOD-323
  • 3D model: SOD-323 (KiCad packages3D, STEP)
  • 3D model files: bas321jx-etched.step / bas321jx-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bas321jx.step / bas321jx.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (12 pp, sha256 8da037e25448aba1, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF