# BAS316WS

**CBI** · Switching Diodes · SOD-323

BAS316WS from CBI, in a SOD-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Cathode | passive | Cathode of the silicon epitaxial planar switching diode (VRRM 100 V, IF 250 mA continuous). |
| 2 | Anode | passive | Anode of the silicon epitaxial planar switching diode (VRRM 100 V, IF 250 mA continuous). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | CBI |
| Package | SOD-323 |
| Category | Diodes |
| Pins | 2 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive Peak Reverse Voltage | VRRM |  |  | 100 | V | Ta = 25 °C | 1 |
| Reverse Voltage | VR |  |  | 100 | V | Ta = 25 °C | 1 |
| Continuous Forward Current | IF |  |  | 250 | mA | Ta = 25 °C | 1 |
| Repetitive Peak Forward Current | IFRM |  |  | 500 | mA | Ta = 25 °C | 1 |
| Non-Repetitive Peak Forward Current | IFSM |  |  | 4 | A | t = 1 µs | 1 |
| Non-Repetitive Peak Forward Current | IFSM |  |  | 1 | A | t = 1 ms | 1 |
| Non-Repetitive Peak Forward Current | IFSM |  |  | 0.5 | A | t = 1 s | 1 |
| Total Power Dissipation | Ptot |  |  | 200 | mW | Ta = 25 °C | 1 |
| Junction Temperature | Tj |  |  | 150 | °C | Ta = 25 °C | 1 |
| Storage Temperature Range | Tstg | -65 |  | 150 | °C | Ta = 25 °C | 1 |
| Forward Voltage | VF |  |  | 0.715 | V | IF = 1 mA | 1 |
| Forward Voltage | VF |  |  | 0.855 | V | IF = 10 mA | 1 |
| Forward Voltage | VF |  |  | 1 | V | IF = 50 mA | 1 |
| Forward Voltage | VF |  |  | 1.25 | V | IF = 150 mA | 1 |
| Reverse Current | IR |  |  | 30 | nA | VR = 25 V | 1 |
| Reverse Current | IR |  |  | 1 | µA | VR = 75 V | 1 |
| Reverse Current | IR |  |  | 30 | µA | VR = 25 V, TJ = 150 °C | 1 |
| Reverse Current | IR |  |  | 50 | µA | VR = 75 V, TJ = 150 °C | 1 |
| Diode Capacitance | Ctot |  |  | 1.5 | pF | VR = 0 V, f = 1 MHz | 1 |
| Reverse Recovery Time | trr |  |  | 4 | ns | IF = IR = 10 mA, Irr = 0.1 X IR, RL = 100 Ω | 1 |

## CAD (KiCad official)

- Symbol: `BAS316WS`
- Footprint: `Diode_SMD:D_SOD-323`
- 3D model: SOD-323 (KiCad packages3D, STEP)
- 3D model files: `bas316ws-etched.step` / `bas316ws-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bas316ws.step` / `bas316ws.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [CBI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590208278157832192) (3 pp, sha256 `9b971e10c160bc20`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/bas316ws-datasheet.pdf)