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BAS316-QX

Public Made by Adom

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Nexperia Switching Diodes, SOD-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BAS316-QX

Nexperia · Switching Diodes · SOD-323

BAS316-QX from Nexperia, in a SOD-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 K passive Cathode terminal of the diode; the datasheet's power dissipation (Ptot ≤ 400 mW at Tsp ≤ 90 °C) and thermal resistance (Rth(j-sp) ≤ 150 K/W) are referenced to the soldering point of this cathode tab.
2 A passive Anode terminal of the diode; the diode ratings apply across anode to cathode, including VR ≤ 100 V and IF ≤ 250 mA.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOD-323
Category Diodes
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Repetitive peak reverse voltage VRRM 100 V 3
Reverse voltage VR 100 V 3
Forward current IF 250 mA Note [1]: device mounted on FR4 PCB, single-side copper, tin-plated and standard footprint 3
Non-repetitive peak forward current IFSM 4 A tp = 1 µs; square wave; Tj(init) = 25 °C 3
Non-repetitive peak forward current IFSM 1 A tp = 1 ms; square wave; Tj(init) = 25 °C 3
Non-repetitive peak forward current IFSM 0.5 A tp = 1 s; square wave; Tj(init) = 25 °C 3
Repetitive peak forward current IFRM 500 mA tp ≤ 0.5 ms; δ = 0.25 3
Total power dissipation Ptot 400 mW Tsp ≤ 90 °C; Notes [1] [2]: device on FR4 PCB, soldering point of cathode tab 3
Junction temperature Tj 150 °C 3
Ambient temperature Tamb -65 150 °C 3
Storage temperature Tstg -65 150 °C 3
Thermal resistance from junction to solder point Rth(j-sp) 150 K/W in free air; Note [1]: soldering point of cathode tab 3
Forward voltage VF 715 mV IF = 1 mA; Tamb = 25 °C; pulsed test tp ≤ 300 µs; δ ≤ 0.02 4
Forward voltage VF 855 mV IF = 10 mA; Tamb = 25 °C; pulsed test tp ≤ 300 µs; δ ≤ 0.02 4
Forward voltage VF 1 V IF = 50 mA; Tamb = 25 °C; pulsed test tp ≤ 300 µs; δ ≤ 0.02 4
Forward voltage VF 1.25 V IF = 150 mA; Tamb = 25 °C; pulsed test tp ≤ 300 µs; δ ≤ 0.02 4
Reverse current IR 30 nA VR = 25 V; Tamb = 25 °C 4
Reverse current IR 0.5 µA VR = 80 V; Tamb = 25 °C 4
Reverse current IR 30 µA VR = 25 V; Tj = 150 °C 4
Reverse current IR 50 µA VR = 80 V; Tj = 150 °C 4
Diode capacitance Cd 1.5 pF VR = 0 V; f = 1 MHz; Tamb = 25 °C 4
Reverse recovery time trr 4 ns IF = 10 mA; IR = 10 mA; RL = 100 Ω; IR(meas) = 1 mA; Tamb = 25 °C 4
Peak forward recovery voltage VFRM 1.75 V IF = 10 mA; tr = 20 ns; Tamb = 25 °C 4

CAD (KiCad official)

  • Symbol: BAS316-QX
  • Footprint: Diode_SMD:D_SOD-323
  • 3D model: SOD-323 (KiCad packages3D, STEP)
  • 3D model files: bas316-qx-etched.step / bas316-qx-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bas316-qx.step / bas316-qx.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (11 pp, sha256 09618a9c90c496a1, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF