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BAS29

Public Made by Adom

by adom

Nexperia Avalanche Diodes, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BAS29

Nexperia · Avalanche Diodes · SOT-23

BAS29 from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A passive Anode of the general purpose switching diode (VR max. 90 V, IF max. 250 mA).
2 n.c. unconnected Not connected.
3 K passive Cathode of the general purpose switching diode (VR max. 90 V, IF max. 250 mA).

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-23
Category Diodes
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Repetitive peak reverse voltage VRRM 110 V 2
Reverse voltage VR 90 V 2
Forward current IF 250 mA 2
Forward current (second row) IF 150 mA 2
Non-repetitive peak forward current IFSM 10 A tp = 1 µs; square wave; Tj(init) = 25 °C 2
Non-repetitive peak forward current IFSM 4 A tp = 100 µs; square wave; Tj(init) = 25 °C 2
Non-repetitive peak forward current IFSM 0.75 A tp = 1 s; square wave; Tj(init) = 25 °C 2
Repetitive peak forward current IFRM 600 mA 2
Total power dissipation Ptot 250 mW Tamb ≤ 25 °C; device mounted on an FR4 printed-circuit board 2
Junction temperature Tj 150 °C 2
Storage temperature Tstg -65 150 °C 2
Thermal resistance junction to ambient Rth(j-a) 500 K/W Device mounted on an FR4 printed-circuit board 3
Thermal resistance junction to solder point Rth(j-sp) 360 K/W 3
Reverse breakdown voltage V(BR)R 120 170 V IR = 1 mA; Tj = 25 °C 3
Forward voltage VF 750 mV IF = 10 mA; Tj = 25 °C 3
Forward voltage VF 840 mV IF = 50 mA; Tj = 25 °C 3
Forward voltage VF 900 mV IF = 100 mA; Tj = 25 °C 3
Forward voltage VF 1 V IF = 200 mA; Tj = 25 °C 3
Forward voltage VF 1.25 V IF = 400 mA; Tj = 25 °C 3
Reverse current IR 100 nA VR = 90 V; Tj = 25 °C 3
Reverse current IR 100 µA VR = 90 V; Tj = 150 °C 3
Diode capacitance Cd 35 pF VR = 0 V; f = 1 MHz; Tamb = 25 °C 3
Reverse recovery time trr 50 ns IF = 30 mA; IR = 30 mA; RL = 100 Ω; IR(meas) = 3 mA; Tamb = 25 °C 3
Peak reverse recovery current IRM 600 mA 3

CAD (KiCad official)

  • Symbol: BAS29
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bas29-etched.step / bas29-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bas29.step / bas29.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (9 pp, sha256 87bb5b01b0a5ddbb, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF