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BAS20

Public Made by Adom

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Nexperia Switching Diodes, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BAS20

Nexperia · Switching Diodes · SOT-23

BAS20 from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A passive Anode of the high-voltage switching diode; the datasheet gives no pin-specific limit, so the device limits apply (VR 150 V, IF 200 mA continuous).
2 n.c. unconnected Not connected; the datasheet assigns no electrical function to this pin.
3 K passive Cathode of the high-voltage switching diode; the datasheet gives no pin-specific limit, so the device limits apply (VR 150 V, IF 200 mA continuous).

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-23
Category Diodes
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Ambient temperature Tamb -55 150 °C 2
Repetitive peak reverse voltage VRRM 200 V 2
Reverse voltage VR 150 V 2
Continuous forward current IF 200 mA 2
Non-repetitive peak forward current IFSM 9 A tp = 1 µs; square wave; Tj(init) = 25 °C 2
Non-repetitive peak forward current IFSM 3 A tp = 100 µs; square wave; Tj(init) = 25 °C 2
Non-repetitive peak forward current IFSM 1.7 A tp = 10 ms; square wave; Tj(init) = 25 °C 2
Repetitive peak forward current IFRM 625 mA 2
Total power dissipation Ptot 250 mW Tamb ≤ 25 °C; device mounted on an FR4 printed-circuit board 2
Junction temperature Tj 150 °C 2
Storage temperature Tstg -65 150 °C 2
Thermal resistance from junction to ambient Rth(j-a) 500 K/W Device mounted on an FR4 printed-circuit board 2
Thermal resistance from junction to solder point Rth(j-sp) 330 K/W 2
Forward voltage VF 1 V IF = 100 mA; Tj = 25 °C 3
Forward voltage VF 1.25 V IF = 200 mA; Tj = 25 °C 3
Reverse current IR 100 nA VR = 150 V; Tj = 25 °C 3
Reverse current IR 100 µA VR = 150 V; Tj = 150 °C 3
Diode capacitance Cd 5 pF VR = 0 V; f = 1 MHz; Tamb = 25 °C 3
Reverse recovery time trr 50 ns IF = 30 mA; IR = 30 mA; RL = 100 Ω; IR(meas) = 3 mA; Tamb = 25 °C 3

CAD (KiCad official)

  • Symbol: BAS20
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bas20-etched.step / bas20-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bas20.step / bas20.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (8 pp, sha256 419ab5fe990b3cf9, retrieved 2026-10-18, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF