component

BAS116LT1G

Public Made by Adom

by adom

onsemi Switching Diodes, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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bas116lt1g-etched.step bas116lt1g: factory component page (healed after the 2026-10-18 wiki outage) · Ray 9d ago
bas116lt1g-hero.glb bas116lt1g: hero GLB from the etched model (keeps the MPN mark) · Ray 9d ago
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BAS116LT1G

onsemi · Switching Diodes · SOT-23

BAS116LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 ANODE passive Anode terminal of the switching diode; the device is rated for 75 Vdc continuous reverse voltage and 200 mAdc peak forward current.
2 NO CONNECTION unconnected Marked NO CONNECTION in the STYLE 8 pin assignment, and the datasheet gives no electrical function for this pin.
3 CATHODE passive Cathode terminal of the switching diode; the device is rated for 75 Vdc continuous reverse voltage and 200 mAdc peak forward current.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Diodes
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Reverse Breakdown Voltage V(BR) 75 Vdc IBR = 100 Adc 2
Reverse Voltage Leakage Current IR 5 nAdc VR = 75 Vdc 2
Reverse Voltage Leakage Current IR 80 nAdc VR = 75 Vdc, TJ = 150°C 2
Forward Voltage VF 900 mV IF = 1.0 mAdc 2
Forward Voltage VF 1000 mV IF = 10 mAdc 2
Forward Voltage VF 1100 mV IF = 50 mAdc 2
Forward Voltage VF 1250 mV IF = 150 mAdc 2
Diode Capacitance CD 2 pF VR = 0 V, f = 1.0 MHz 2
Reverse Recovery Time trr 3 s IF = IR = 10 mAdc (Figure 1) 2
Continuous Reverse Voltage VR 75 Vdc 1
Peak Forward Current IF 200 mAdc 1
Peak Forward Surge Current IFM(surge) 500 mAdc 1
Junction and Storage Temperature TJ, Tstg -55 150 °C 1
Total Device Dissipation (FR-5 Board) PD 225 mW FR-5 Board (Note 1), TA = 25°C 1
Thermal Resistance, Junction-to-Ambient (FR-5 Board) RJA 556 °C/W FR-5 Board (Note 1) 1
Total Device Dissipation (Alumina Substrate) PD 300 mW Alumina Substrate (Note 2), TA = 25°C 1
Thermal Resistance, Junction-to-Ambient (Alumina Substrate) RJA 417 °C/W Alumina Substrate (Note 2) 1

CAD (KiCad official)

  • Symbol: BAS116LT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bas116lt1g-etched.step / bas116lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bas116lt1g.step / bas116lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (5 pp, sha256 964539a35c29fea3, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF