component
BA592E6327HTSA1
Public Made by Adomby adom
Infineon Technologies Diodes - General Purpose, SOD-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 5d ago |
| viewers | 5d ago |
| ba592e6327htsa1-etched.glb | 5d ago |
| ba592e6327htsa1-etched.step | 5d ago |
| ba592e6327htsa1-hero.glb | 5d ago |
| ba592e6327htsa1-hero.overlay.json | 5d ago |
| ba592e6327htsa1.glb | 5d ago |
| ba592e6327htsa1.kicad_mod | 5d ago |
| ba592e6327htsa1.kicad_sym | 5d ago |
| ba592e6327htsa1.lbr | 5d ago |
| ba592e6327htsa1.step | 5d ago |
| package.json | 5d ago |
| page.json | 5d ago |
| README.md | 5d ago |
BA592E6327HTSA1
Infineon Technologies · Diodes - General Purpose · SOD-323
BA592E6327HTSA1 from Infineon Technologies, in a SOD-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode of the single RF switching diode, on the end of the package carrying the cathode marking band; reverse voltage rating VR is 35 V. |
| 2 | A | passive | Anode of the single RF switching diode; forward current is rated at IF 100 mA maximum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOD-323 |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Diode reverse voltage | VR | 35 | V | 1 | |||
| Forward current | IF | 100 | mA | 1 | |||
| Junction temperature | TJ | 150 | °C | 1 | |||
| Operating temperature range | Top | -55 | 125 | °C | 1 | ||
| Storage temperature | TStg | -55 | 150 | °C | 1 | ||
| Junction - soldering point thermal resistance (BA592) | RthJS | 135 | K/W | 2 | |||
| Reverse current | IR | 20 | nA | VR = 20 V | 2 | ||
| Forward voltage | VF | 1 | V | IF = 100 mA | 2 | ||
| Diode capacitance | CT | 0.65 | 0.92 | 1.4 | pF | VR = 1 V, f = 1 MHz | 3 |
| Diode capacitance | CT | 0.6 | 0.85 | 1.1 | pF | VR = 3 V, f = 1 MHz | 3 |
| Forward resistance | rf | 0.45 | 0.7 | Ω | IF = 3 mA, f = 100 MHz | 3 | |
| Forward resistance | rf | 0.36 | 0.5 | Ω | IF = 10 mA, f = 100 MHz | 3 | |
| Diode capacitance | CT | 1 | pF | VR = 0 V, f = 100 MHz | 3 | ||
| Reverse parallel resistance | RP | 100 | kΩ | VR = 0 V, f = 100 MHz | 3 | ||
| Charge carrier life time | τrr | 120 | ns | IF = 10 mA, IR = 6 mA, measured at IR = 3 mA, RL = 100 Ω | 3 | ||
| I-region width | WI | 3 | µm | 3 | |||
| Insertion loss | IL | 0.1 | dB | IF = 0.1 mA, f = 1.8 GHz | 3 | ||
| Insertion loss | IL | 0.5 | dB | IF = 3 mA, f = 1.8 GHz | 3 | ||
| Insertion loss | IL | 0.4 | dB | IF = 10 mA, f = 1.8 GHz | 3 | ||
| Isolation | ISO | 23.5 | dB | VR = 0 V, f = 100 MHz | 3 | ||
| Isolation | ISO | 10.5 | dB | VR = 0 V, f = 470 MHz | 3 | ||
| Isolation | ISO | 5.5 | dB | VR = 0 V, f = 1 GHz | 3 |
CAD (KiCad official)
- Symbol:
BA592E6327HTSA1 - Footprint:
Diode_SMD:D_SOD-323 - 3D model: SOD-323 (KiCad packages3D, STEP)
- 3D model files:
ba592e6327htsa1-etched.step/ba592e6327htsa1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ba592e6327htsa1.step/ba592e6327htsa1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (11 pp, sha256
b782c693e66a69b0, retrieved 2026-10-31, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).