# BA12003DF-ZE2

**ROHM Semicon** · Pre-ordered Chips · SOP-16

BA12003DF-ZE2 from ROHM Semicon, in a SOP-16. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | IN1 | input | Input 1 to the darlington driver channel 1 (Rin 2.7kΩ on BA12003, 10.5kΩ on BA12004; input voltage -0.5 to +30V). |
| 2 | IN2 | input | Input 2 to the darlington driver channel 2 (Rin 2.7kΩ on BA12003, 10.5kΩ on BA12004; input voltage -0.5 to +30V). |
| 3 | IN3 | input | Input 3 to the darlington driver channel 3 (Rin 2.7kΩ on BA12003, 10.5kΩ on BA12004; input voltage -0.5 to +30V). |
| 4 | IN4 | input | Input 4 to the darlington driver channel 4 (Rin 2.7kΩ on BA12003, 10.5kΩ on BA12004; input voltage -0.5 to +30V). |
| 5 | IN5 | input | Input 5 to the darlington driver channel 5 (Rin 2.7kΩ on BA12003, 10.5kΩ on BA12004; input voltage -0.5 to +30V). |
| 6 | IN6 | input | Input 6 to the darlington driver channel 6 (Rin 2.7kΩ on BA12003, 10.5kΩ on BA12004; input voltage -0.5 to +30V). |
| 7 | IN7 | input | Input 7 to the darlington driver channel 7 (Rin 2.7kΩ on BA12003, 10.5kΩ on BA12004; input voltage -0.5 to +30V). |
| 8 | GND | power_in | Ground; GND terminal current max 2.3A (pulse width ≤20ms, duty ≤10%, 7 circuits flowing the same current). |
| 9 | COM | passive | Clamp diode cathode common to the output surge absorption diodes; diode reverse voltage 60V max, forward current 500mA/circuit max. |
| 10 | OUT7 | output | Output 7 open-collector darlington output; VCE -0.5 to +60V, output current 500mA/circuit max. |
| 11 | OUT6 | output | Output 6 open-collector darlington output; VCE -0.5 to +60V, output current 500mA/circuit max. |
| 12 | OUT5 | output | Output 5 open-collector darlington output; VCE -0.5 to +60V, output current 500mA/circuit max. |
| 13 | OUT4 | output | Output 4 open-collector darlington output; VCE -0.5 to +60V, output current 500mA/circuit max. |
| 14 | OUT3 | output | Output 3 open-collector darlington output; VCE -0.5 to +60V, output current 500mA/circuit max. |
| 15 | OUT2 | output | Output 2 open-collector darlington output; VCE -0.5 to +60V, output current 500mA/circuit max. |
| 16 | OUT1 | output | Output 1 open-collector darlington output; VCE -0.5 to +60V, output current 500mA/circuit max. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOP-16 |
| Category | Interface ICs |
| Pins | 16 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Output Leakage Current | IL |  |  | 10 | µA | VCE=60V | 4 |
| Output DC Current Gain | hFE | 1000 | 2400 |  |  | VCE=2.0V, IO=350mA | 4 |
| Output Saturation Voltage1 | VCEsat1 |  | 0.94 | 1.1 | V | IO=100mA, II=250μA | 4 |
| Output Saturation Voltage2 | VCEsat2 |  | 1.14 | 1.3 | V | IO=200mA, II=350μA | 4 |
| Output Saturation Voltage3 | VCEsat3 |  | 1.46 | 1.6 | V | IO=350mA, II=500μA | 4 |
| Input Voltage1 (BA12003D) | VI1 | 2 |  |  | V | VCE=2.0V, IO=100mA | 4 |
| Input Voltage2 (BA12003D) | VI2 | 2.4 |  |  | V | VCE=2.0V, IO=200mA | 4 |
| Input Voltage3 (BA12003D) | VI3 | 3.4 |  |  | V | VCE=2.0V, IO=350mA | 4 |
| Input Current (BA12003D) | II |  | 0.9 | 1.35 | mA | VI=3.85V | 4 |
| Diode Reverse Current | IR |  |  | 50 | µA | VR=60V | 4 |
| Diode Forward Voltage | VF |  | 1.73 | 2 | V | IF=350mA | 4 |
| Input Capacity | CI |  | 30 |  | pF | VI=0V, f=1MHz | 4 |
| Output Voltage | VCE | -0.5 |  | 60 | V | TA=25℃ | 3 |
| Output Current | IO |  |  | 500 | mA/circuit | TA=25℃ | 3 |
| Input Voltage | VI | -0.5 |  | 30 | V | TA=25℃ | 3 |
| Diode Reverse Voltage | VR |  |  | 60 | V | TA=25℃ | 3 |
| Diode Forward Current | IF |  |  | 500 | mA/circuit | TA=25℃ | 3 |
| GND Terminal Current | IGND |  |  | 2.3 | A | Pulse width≤20ms, Duty Cycle≤10%, 7 circuits flow the same current | 3 |
| Operating Temperature | Topr | -40 |  | 85 | °C |  | 3 |
| Storage Temperature | Tstg | -55 |  | 150 | °C |  | 3 |
| Thermal Resistance Junction to Ambient (1s) | θJA |  | 169.7 |  | °C/W | SOP-J16A, 1s board (JESD51-3) | 3 |
| Thermal Resistance Junction to Ambient (2s2p) | θJA |  | 115.4 |  | °C/W | SOP-J16A, 2s2p board (JESD51-7) | 3 |
| Input Resistor | Rin |  | 2.7 |  | kΩ | BA12003DF-Z | 1 |
| Operating supply voltage range |  | -0.5 |  | 30 | V | Key specification | 1 |
| Derating slope |  |  | 5.9 |  | mW/℃ | BA12003DF-Z, BA12004DF-Z | 8 |

## Materials and finish

As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).

| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| housing | abs |  | array consist of 7circuits, input resistor to limit base current and output surge absorption clamp diode. | 1 |

## CAD (KiCad official)

- Symbol: `BA12003DF-ZE2`
- Footprint: `Package_SO:SOIC-16_3.9x9.9mm_P1.27mm`
- 3D model: SOP-16 (KiCad packages3D, STEP)
- 3D model files: `ba12003df-ze2-etched.step` / `ba12003df-ze2-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ba12003df-ze2.step` / `ba12003df-ze2.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [ROHM Semicon datasheet](docs/ba12003df-ze2-datasheet.pdf) (16 pp, sha256 `752f2d9d8d9ed3f5`, retrieved 2026-10-27, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ba12003df-ze2-datasheet.pdf)