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Ray Publish 0.1.0 33bbd7a 13d ago

B772Y-2AF

FOSAN · Bipolar (BJT) · SOT-89-3L

B772Y-2AF from FOSAN, in a SOT-89-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the PNP transistor; VEBO max -6 V and BVEBO min -6 V (IE=-100µA).
2 C passive Collector of the PNP transistor (also connected to the exposed tab); VCBO -40 V, VCEO -30 V, IC max -3000 mA.
3 E passive Emitter of the PNP transistor; power dissipation 500 mW at Ta=25℃, junction temperature -55 to +150℃.

Key specifications

Parameter Value
Manufacturer FOSAN
Package SOT-89-3L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Breakdown Voltage BVCBO -40 V IC= -100µA, IE=0 2
Collector-Emitter Breakdown Voltage BVCEO -30 V IC= -10mA, IB=0 2
Emitter-Base Breakdown Voltage BVEBO -6 V IE= -100µA, IC=0 2
Collector-Base Leakage Current ICBO -1 µA VCB= -40V, IE=0 2
Collector-Emitter Leakage Current ICEO -10 µA VCE= -30V, IB=0 2
Emitter-Base Leakage Current IEBO -1 µA VEB= -6V, IC=0 2
DC Current Gain HFE 60 400 VCE= -2V, IC= -1000mA 2
DC Current Gain, Y grade (device marking) HFE 160 320 Y grade per device marking table 1
Collector-Emitter Saturation Voltage VCE(sat) -0.5 V IC= -2A, IB= -0.2A 2
Base-Emitter Saturation Voltage VBE(sat) -1.5 V IC= -2A, IB= -0.2A 2
Collector-Base Voltage VCBO -40 V 1
Collector-Emitter Voltage VCEO -30 V 1
Emitter-Base Voltage VEBO -6 V 1
Collector Current IC -3000 mA 1
Power dissipation PC 500 mW Ta=25℃ 1
Junction and Storage Temperature TJ,Tstg -55 150 ℃ 1
Thermal Resistance Junction-Ambient RΘJA 250 ℃/W 1

CAD (KiCad official)

  • Symbol: B772Y-2AF
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89-3L (KiCad packages3D, STEP)
  • 3D model files: b772y-2af-etched.step / b772y-2af-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); b772y-2af.step / b772y-2af.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: FOSAN datasheet (4 pp, sha256 5667d1bb23727ff4, retrieved 2026-10-21, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF