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B60N06A-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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B60N06A-VB

VBsemi Elec · MOSFETs · TO-252

B60N06A-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limit is ±20 V, with threshold of 2.0 to 4.0 V at ID = 250 μA.
2 D passive Drain (also the case/tab, RthJC 1.1 °C/W); VDS max 60 V and continuous ID 97 A at TC = 25 °C.
3 S passive Source; continuous diode source current IS is 100 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage VDS 60 V VGS = 0 V, ID = 250 μA 2
Gate-Source Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 250 μA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 μA VGS = 0 V, VDS = 60 V 2
Zero Gate Voltage Drain Current IDSS 50 μA VGS = 0 V, VDS = 60 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS 150 μA VGS = 0 V, VDS = 60 V, TJ = 175 °C 2
On-State Drain Current ID(on) 50 A VGS = 10 V, VDS ≥ 5 V 2
Drain-Source On-State Resistance RDS(on) 0.0117 Ω VGS = 10 V, ID = 25 A, TJ = 125 °C 2
Drain-Source On-State Resistance RDS(on) 0.0149 Ω VGS = 10 V, ID = 25 A, TJ = 175 °C 2
Drain-Source On-State Resistance RDS(on) 0.012 Ω VGS = 4.5 V, ID = 20 A 2
Forward Transconductance gfs 177 S VDS = 15 V, ID = 25 A 2
Output Capacitance Coss 441 555 pF VGS = 0 V, VDS = 25 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 200 250 pF VGS = 0 V, VDS = 25 V, f = 1 MHz 2
Gate Resistance Rg 1 2 3 Ω f = 1 MHz 2
Turn-Off Delay Time td(off) 41 62 ns VDD = 30 V, RL = 0.6 Ω, ID ≅ 50 A, VGEN = 10 V, Rg = 1 Ω 2
Fall Time tf 7 11 ns VDD = 30 V, RL = 0.6 Ω, ID ≅ 50 A, VGEN = 10 V, Rg = 1 Ω 2
Pulsed Current ISM 290 A 2
Forward Voltage VSD 0.9 1.5 V IF = 50 A, VGS = 0 V 2
Drain-Source Voltage VDS 60 V TC = 25 °C 1
Gate-Source Voltage VGS -20 20 V TC = 25 °C 1
Continuous Drain Current ID 97 A TC = 25 °C 1
Continuous Drain Current ID 56 A TC = 125 °C 1
Continuous Source Current (Diode Conduction) IS 100 A TC = 25 °C 1
Pulsed Drain Current IDM 290 A TC = 25 °C 1
Single Pulse Avalanche Current IAS 45 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 101 mJ L = 0.1 mH 1
Maximum Power Dissipation PD 136 W TC = 25 °C 1
Maximum Power Dissipation PD 45 W TC = 125 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Junction-to-Ambient Thermal Resistance RthJA 50 °C/W PCB mount (1" square FR-4) 1
Junction-to-Case (Drain) Thermal Resistance RthJC 1.1 °C/W 1

CAD (KiCad official)

  • Symbol: B60N06A-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: b60n06a-vb-etched.step / b60n06a-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); b60n06a-vb.step / b60n06a-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 65a2c5d4c2418c28, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF