component
B5819WSFL
Public Made by Adomby adom
Shandong Jingdao Microelectronics Schottky Barrier Diodes (SBD), SOD-323FL. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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B5819WSFL
Shandong Jingdao Microelectronics · Schottky Barrier Diodes (SBD) · SOD-323FL
B5819WSFL from Shandong Jingdao Microelectronics, in a SOD-323FL. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Cathode | passive | Cathode terminal of the Schottky barrier rectifier, rated up to 40 V repetitive peak reverse voltage and 1 A average forward current for the B5819WSFL. |
| 2 | Anode | passive | Anode terminal of the Schottky barrier rectifier, which forms the forward conduction path opposite the cathode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shandong Jingdao Microelectronics |
| Package | SOD-323FL |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum Repetitive Peak Reverse Voltage | VRRM | 40 | V | 1 | |||
| Maximum RMS voltage | VRMS | 28 | V | 1 | |||
| Maximum Average Forward Rectified Current | IF(AV) | 1 | A | 1 | |||
| Peak Forward Surge Current, 8.3ms Single Half Sine-wave Superimposed On Rated Load (JEDEC method) | IFSM | 25 | A | 8.3 ms single half sine-wave, JEDEC method | 1 | ||
| Maximum Instantaneous Forward Voltage | VF | 0.6 | V | at 1 A | 1 | ||
| Maximum Instantaneous Forward Voltage | VF | 0.9 | V | at 3 A | 1 | ||
| Maximum Instantaneous Reverse Current at Rated DC Reverse Voltage | IR | 1 | mA | TA = 25°C, rated DC reverse voltage | 1 | ||
| Maximum Instantaneous Reverse Current at Rated DC Reverse Voltage | IR | 10 | mA | TA = 100°C, rated DC reverse voltage | 1 | ||
| Junction temperature | Tj | -55 | 125 | °C | 1 | ||
| Storage temperature | Tstg | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
B5819WSFL - Footprint:
Diode_SMD:D_SOD-323F - 3D model: SOD-323FL (KiCad packages3D, STEP)
- 3D model files:
b5819wsfl-etched.step/b5819wsfl-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);b5819wsfl.step/b5819wsfl.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Shandong Jingdao Microelectronics datasheet (3 pp, sha256
c24adf386565a09a, retrieved 2026-10-30, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# B5819WSFL
**Shandong Jingdao Microelectronics** · Schottky Barrier Diodes (SBD) · SOD-323FL
B5819WSFL from Shandong Jingdao Microelectronics, in a SOD-323FL. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Cathode | passive | Cathode terminal of the Schottky barrier rectifier, rated up to 40 V repetitive peak reverse voltage and 1 A average forward current for the B5819WSFL. |
| 2 | Anode | passive | Anode terminal of the Schottky barrier rectifier, which forms the forward conduction path opposite the cathode. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shandong Jingdao Microelectronics |
| Package | SOD-323FL |
| Category | Diodes |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum Repetitive Peak Reverse Voltage | VRRM | | | 40 | V | | 1 |
| Maximum RMS voltage | VRMS | | | 28 | V | | 1 |
| Maximum Average Forward Rectified Current | IF(AV) | | | 1 | A | | 1 |
| Peak Forward Surge Current, 8.3ms Single Half Sine-wave Superimposed On Rated Load (JEDEC method) | IFSM | | | 25 | A | 8.3 ms single half sine-wave, JEDEC method | 1 |
| Maximum Instantaneous Forward Voltage | VF | | | 0.6 | V | at 1 A | 1 |
| Maximum Instantaneous Forward Voltage | VF | | | 0.9 | V | at 3 A | 1 |
| Maximum Instantaneous Reverse Current at Rated DC Reverse Voltage | IR | | | 1 | mA | TA = 25°C, rated DC reverse voltage | 1 |
| Maximum Instantaneous Reverse Current at Rated DC Reverse Voltage | IR | | | 10 | mA | TA = 100°C, rated DC reverse voltage | 1 |
| Junction temperature | Tj | -55 | | 125 | °C | | 1 |
| Storage temperature | Tstg | -55 | | 150 | °C | | 1 |
## CAD (KiCad official)
- Symbol: `B5819WSFL`
- Footprint: `Diode_SMD:D_SOD-323F`
- 3D model: SOD-323FL (KiCad packages3D, STEP)
- 3D model files: `b5819wsfl-etched.step` / `b5819wsfl-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `b5819wsfl.step` / `b5819wsfl.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Shandong Jingdao Microelectronics datasheet](docs/b5819wsfl-datasheet.pdf) (3 pp, sha256 `c24adf386565a09a`, retrieved 2026-10-30, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/b5819wsfl-datasheet.pdf)