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AUP039N10

Public Made by Adom

by adom

ANHI MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AUP039N10

ANHI · MOSFETs · TO-220

AUP039N10 from ANHI, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; enhancement-mode threshold Vth 1.2 to 2.5 V, static VGS limit ±20 V.
2 D passive Drain (also connected to the metal tab); VDS 100 V, continuous drain current 125 A at TC=25°C.
3 S passive Source; RDS(on) max 3.9 mΩ at VGS=10V, ID=20A.

Key specifications

Parameter Value
Manufacturer ANHI
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current ID 125 A TC=25°C 2
Pulsed drain current ID,pulse 437 A TC=25°C 2
Avalanche energy, single pulse EAS 306 mJ Tc=25℃, VDD=50V, I=35A, L=0.1mH, RG=25Ω 2
Avalanche current, single pulse IAR 35 A Tc=25℃, VDD=50V, L=0.1mH, RG=25Ω 2
Gate source voltage (static) VGS -20 20 V static; 2
Power dissipation (TO220&263) Ptot 151 W TC=25°C 2
Storage temperature Tstg -55 150 °C 2
Operating junction temperature Tj -55 150 °C 2
Soldering temperature TL 260 °C Distance of 1.6mm from case for 10s 2
Thermal resistance, junction - case (TO263&TO220) RthJC 0.83 °C/W 3
Thermal resistance, junction - ambient (TO263&TO220) RthJA 62 °C/W device on PCB, minimal footprint 3
Drain-source breakdown voltage V(BR)DSS 100 V VGS=0V, ID=250uA 4
Gate threshold voltage V(GS)th 1.2 1.8 2.5 V VDS=VGS, ID=250uA 4
Zero gate voltage drain current IDSS 1 uA VDS=80V, VGS=0V, Tj=25°C 4
Gate-source leakage current IGSS -100 100 nA VGS=±20V, VDS=0V 4
Drain-source on-state resistance (TO220&220F&263) RDS(on) 3.6 3.9 mΩ VGS=10V, ID=20A, Tj=25°C 4
Gate resistance (Intrinsic) RG 0.6 Ω f=1MHz, open drain 4
Input capacitance Ciss 3562 PF VGS=0V, VDS=50V, f=1MHz 4
Output capacitance Coss 865 PF VGS=0V, VDS=50V, f=1MHz 4
Reverse transfer capacitance Crss 83 PF VGS=0V, VDS=50V, f=1MHz 4
Turn-on delay time td(on) 29 ns VDD=50V,VGS=10V,ID=20A, RG=10Ω 4
Rise time tr 55 ns VDD=50V,VGS=10V,ID=20A, RG=10Ω 4
Turn-off delay time td(off) 69 ns VDD=50V,VGS=10V,ID=20A, RG=10Ω 4
Fall time tf 43 ns VDD=50V,VGS=10V,ID=20A, RG=10Ω 4
Gate to source charge Qgs 15.5 nC VDD=50V, ID=20A, VGS=0 to 10V 4
Gate to drain charge Qgd 17.6 nC VDD=50V, ID=20A, VGS=0 to 10V 4
Gate charge total Qg 60.7 nC VDD=50V, ID=20A, VGS=0 to 10V 4
Diode forward voltage VSD 0.7 V VGS=0V, IF=1A, Tj=25°C 5
Reverse recovery time trr 45 ns VR=30V, IF=20A, diF/dt=300A/µs 5
Reverse recovery charge Qrr 212 nC VR=30V, IF=20A, diF/dt=300A/µs 5
Peak reverse recovery current Irrm 8.4 A VR=30V, IF=20A, diF/dt=300A/µs 5

CAD (KiCad official)

  • Symbol: AUP039N10
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: aup039n10-etched.step / aup039n10-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); aup039n10.step / aup039n10.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ANHI datasheet (13 pp, sha256 e8de2787634c2ff4, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF