component
AUP034N06
Public Made by Adomby adom
ANHI MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 16d ago |
| viewers | 16d ago |
| aup034n06-etched.glb | 16d ago |
| aup034n06-etched.step | 16d ago |
| aup034n06-hero.glb | 16d ago |
| aup034n06-hero.overlay.json | 16d ago |
| aup034n06.glb | 16d ago |
| aup034n06.kicad_mod | 16d ago |
| aup034n06.kicad_sym | 16d ago |
| aup034n06.lbr | 16d ago |
| aup034n06.step | 16d ago |
| package.json | 16d ago |
| page.json | 16d ago |
| README.md | 16d ago |
AUP034N06
ANHI · MOSFETs · TO-220
AUP034N06 from ANHI, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate pin; gate-source voltage static limit is ±20 V with threshold of 2.5 V min to 4.5 V max at ID=250uA. |
| 2 | D | passive | Drain pin, also connected to the metal tab; V(BR)DSS is 60 V min and continuous drain current is 168 A at package at TC=25°C. |
| 3 | S | passive | Source pin; continuous source current of the body diode is 210 A max at silicon. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ANHI |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current at silicon (TC=25°C) | ID | 210 | A | TC=25°C | 2 | ||
| Continuous drain current at package (TC=25°C) | ID | 168 | A | TC=25°C | 2 | ||
| Continuous drain current at silicon (TC=100°C) | ID | 150 | A | TC=100°C | 2 | ||
| Pulsed drain current | ID,pulse | 840 | A | TC=25°C | 2 | ||
| Avalanche energy, single pulse | EAS | 471 | mJ | Tc=25℃,VDD=50V,Vgs=10V, L=0.5mH, RG=25Ω | 2 | ||
| Avalanche current, single pulse | IAR | 43.4 | A | Tc=25℃,VDD=50V,Vgs=10V, L=0.5mH, RG=25Ω | 2 | ||
| Gate source voltage (static) | VGS | -20 | 20 | V | static | 2 | |
| Power dissipation | Ptot | 230 | W | TC=25°C | 2 | ||
| Storage temperature | Tstg | -55 | 175 | °C | 2 | ||
| Operating junction temperature | Tj | -55 | 175 | °C | 2 | ||
| Soldering temperature | TL | 300 | °C | Distance of 1.6mm from case for 10s | 2 | ||
| Thermal resistance, junction - case | RthJC | 0.65 | °C/W | 3 | |||
| Thermal resistance, junction - ambient | RthJA | 62 | °C/W | device on PCB, minimal footprint | 3 | ||
| Drain-source breakdown voltage | V(BR)DSS | 60 | V | VGS=0V, ID=250uA | 4 | ||
| Gate threshold voltage | V(GS)th | 2.5 | 2.8 | 4.5 | V | VDS=VGS, ID=250uA | 4 |
| Zero gate voltage drain current | IDSS | 1 | uA | VDS=60V, VGS=0V, Tj=25°C | 4 | ||
| Gate-source leakage current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 4 | |
| Drain-source on-state resistance | RDS(on) | 3 | 3.4 | mΩ | VGS=10V, ID=20A, Tj=25°C | 4 | |
| Continuous source current at silicon | ISD | 210 | A | Maximum Ratings | 5 |
CAD (KiCad official)
- Symbol:
AUP034N06 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
aup034n06-etched.step/aup034n06-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);aup034n06.step/aup034n06.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ANHI datasheet (10 pp, sha256
8eca58a4abf40660, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).