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AUN084N10

Public Made by Adom

by adom

ANHI MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AUN084N10

ANHI · MOSFETs · DFN-8(5x6)

AUN084N10 from ANHI, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal (pins 1, 2, 3 are tied together); VDS rated 100 V.
2 S passive Source terminal (pins 1, 2, 3 are tied together); VDS rated 100 V.
3 S passive Source terminal (pins 1, 2, 3 are tied together); VDS rated 100 V.
4 G input Gate terminal; static gate-source voltage limited to ±20 V, threshold 1 to 3 V at ID=250uA.
5 D passive Drain terminal (pins 5, 6, 7, 8 are tied together); continuous drain current 68 A at TC=25°C, pulsed 106 A.
6 D passive Drain terminal (pins 5, 6, 7, 8 are tied together); continuous drain current 68 A at TC=25°C, pulsed 106 A.
7 D passive Drain terminal (pins 5, 6, 7, 8 are tied together); continuous drain current 68 A at TC=25°C, pulsed 106 A.
8 D passive Drain terminal (pins 5, 6, 7, 8 are tied together); continuous drain current 68 A at TC=25°C, pulsed 106 A.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer ANHI
Package DFN-8(5x6)
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current ID 68 A TC=25°C 2
Pulsed drain current ID,pulse 106 A TC=25°C 2
Avalanche energy, single pulse EAS 7.2 mJ Tc=25℃, VDD=50V, L=10mH, RG=25Ω 2
Gate source voltage (static) VGS -20 20 V static 2
Power dissipation Ptot 66 W TC=25°C 2
Storage temperature Tstg -55 150 °C 2
Operating junction temperature Tj 150 °C 2
Thermal resistance, junction - ambient RthJA 50 °C/W device on PCB, minimal footprint 3
Thermal resistance, junction - case RthJC 1.9 °C/W 3
Drain-source breakdown voltage V(BR)DSS 100 V VGS=0V, ID=250uA 4
Gate threshold voltage V(GS)th 1 3 V VDS=VGS, ID=250uA 4
Zero gate voltage drain current IDSS 1000 nA VDS=80V, VGS=0V, Tj=25°C 4
Gate-source leakage current IGSS 100 nA VGS=20V, VDS=0V 4
Drain-source on-state resistance RDS(on) 0.007 0.0084 Ω VGS=10V, ID=20A, Tj=25°C 4
Drain-source on-state resistance RDS(on) 0.01 0.013 Ω VGS=4.5V, ID=10A, Tj=25°C 4

CAD (KiCad official)

  • Symbol: AUN084N10
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
  • 3D model files: aun084n10-etched.step / aun084n10-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); aun084n10.step / aun084n10.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ANHI datasheet (7 pp, sha256 d691b3059e486aeb, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF