# AUN063N10

**ANHI** · MOSFETs · DFN5x6-8

AUN063N10 from ANHI, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET, tied with pins 2 and 3. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, tied with pins 1 and 3. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, tied with pins 1 and 2. |
| 4 | G | input | Gate terminal with VGS rated -20 V to 20 V static and threshold Vth of 2.4 to 3.4 V. |
| 5 | D | passive | Drain terminal (100 V VDS), tied with pins 6, 7, 8 and the drain tab. |
| 6 | D | passive | Drain terminal (100 V VDS), tied with pins 5, 7, 8 and the drain tab. |
| 7 | D | passive | Drain terminal (100 V VDS), tied with pins 5, 6, 8 and the drain tab. |
| 8 | D | passive | Drain terminal (100 V VDS), tied with pins 5, 6, 7 and the drain tab. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | ANHI |
| Package | DFN5x6-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 9 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID |  |  | 123 | A | TC=25°C | 2 |
| Pulsed drain current | ID,pulse |  |  | 396 | A | TC=25°C | 2 |
| Avalanche energy, single pulse | EAS |  |  | 240 | mJ | Tc=25℃, VDD=50V, I=31A, L=0.5mH, RG=25Ω | 2 |
| Avalanche current, single pulse | IAR |  |  | 31 | A | Tc=25℃, VDD=50V, L=0.5mH, RG=25Ω | 2 |
| Gate source voltage (static) | VGS | -20 |  | 20 | V | static; | 2 |
| Power dissipation | Ptot |  |  | 151 | W | TC=25°C | 2 |
| Storage temperature | Tstg | -55 |  | 150 | °C |  | 2 |
| Operating junction temperature | Tj | -55 |  | 150 | °C |  | 2 |
| Thermal resistance, junction - case | RthJC |  |  | 1.3 | °C/W |  | 3 |
| Thermal resistance, junction - ambient | RthJA |  |  | 50 | °C/W | device on PCB, minimal footprint | 3 |
| Drain-source breakdown voltage | V(BR)DSS | 100 |  |  | V | VGS=0V, ID=250uA | 4 |
| Gate threshold voltage | V(GS)th | 2.4 |  | 3.4 | V | VDS=VGS, ID=250uA | 4 |
| Zero gate voltage drain current | IDSS |  |  | 1 | uA | VDS=95V, VGS=0V, Tj=25°C | 4 |
| Gate-source leakage current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 4 |
| Drain-source on-state resistance | RDS(on) |  | 5.5 | 6.3 | mΩ | VGS=10V, ID=20A, Tj=25°C | 4 |

## CAD (KiCad official)

- Symbol: `AUN063N10`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN5x6-8 (KiCad packages3D, STEP)
- 3D model files: `aun063n10-etched.step` / `aun063n10-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `aun063n10.step` / `aun063n10.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [ANHI datasheet](docs/aun063n10-datasheet.pdf) (8 pp, sha256 `d3d4767746b1f965`, retrieved 2026-11-04, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/aun063n10-datasheet.pdf)