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AUN050N08BGL

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ANHI MOSFETs, DFN5x6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AUN050N08BGL

ANHI · MOSFETs · DFN5x6-8

AUN050N08BGL from ANHI, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal (pins 1, 2, 3 are source); the datasheet gives VDS 85 V and RDS(on) max 5.0 mΩ at VGS=10V, ID=20A for the DFN5X6 package.
2 S passive Source terminal (pins 1, 2, 3 are source), tied to the MOSFET source.
3 S passive Source terminal (pins 1, 2, 3 are source), tied to the MOSFET source.
4 G input Gate terminal with threshold voltage Vth 1.2 to 2.5 V and static gate-source voltage rating of ±20 V.
5 D passive Drain terminal (pins 5, 6, 7, 8 and the tab are drain), with 65 A continuous drain current at TC=25°C.
6 D passive Drain terminal (pins 5, 6, 7, 8 and the tab are drain), tied to the MOSFET drain.
7 D passive Drain terminal (pins 5, 6, 7, 8 and the tab are drain), tied to the MOSFET drain.
8 D passive Drain terminal (pins 5, 6, 7, 8 and the tab are drain), tied to the MOSFET drain.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer ANHI
Package DFN5x6-8
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage V(BR)DSS 85 V VGS=0V, ID=250uA 4
Gate source voltage (static) VGS -20 20 V static; 2
Continuous drain current ID 65 A TC=25°C 2
Pulsed drain current ID,pulse 250 A TC=25°C 2
Avalanche energy, single pulse EAS 319 mJ Tc=25℃,VDD=50V,Id=35.7A, L=0.5mH, RG=25Ω 2
Avalanche current, single pulse IAR 35.7 A Tc=25℃,VDD=50V,L=0.5mH, RG=25Ω 2
Power dissipation (DFN5x6) Ptot 151 W TC=25°C 2
Storage temperature Tstg -55 150 °C 2
Operating junction temperature Tj -55 150 °C 2
Soldering temperature TL 260 °C Distance of 1.6mm from case for 10s 2
Gate threshold voltage V(GS)th 1.2 2.1 2.5 V VDS=VGS, ID=250uA 4
Zero gate voltage drain current IDSS 1 uA VDS=85V, VGS=0V, Tj=25°C 4
Gate-source leakage current IGSS -100 100 nA VGS=±20V, VDS=0V 4
Drain-source on-state resistance (DFN5X6) RDS(on) 4.3 5 mΩ VGS=10V,ID=20A, Tj=25°C(DFN5X6) 4
Thermal resistance, junction - case (DFN5X6) RthJC 0.83 °C/W 3
Thermal resistance, junction - ambient (DFN5X6) RthJA 50 °C/W device on PCB, minimal footprint 3

CAD (KiCad official)

  • Symbol: AUN050N08BGL
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5x6-8 (KiCad packages3D, STEP)
  • 3D model files: aun050n08bgl-etched.step / aun050n08bgl-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); aun050n08bgl.step / aun050n08bgl.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ANHI datasheet (14 pp, sha256 f24d812083113bd6, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF